Hexagonal Boron Nitride (H-BN) on Si/SiO2
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Hexagonal Boron Nitride (H-BN) on Si/SiO2
| Product Name |
Monolayer h-BN |
| Transparency | > 97% |
| hBN Coverage | 100% with sporadic adlayers |
| Raman Peak | 1370 /cm-1 |
| Bandgap | 5.97 eV |
| Grain size | >4 μm |
Si/SiO2 Substrate |
|
| Type/Doing | P/B |
| Wafer Thickness | 500 +/- 50 μm |
| Oxide Thickness | 300 nm |
| Resistivity | 1-10 (Ω -cm) |
| Orientation | <1-0-0> |
| Growth Method | CZ |
| Metal Impurities | 1.00e10 – 5.00e10 (at/cm2) |
Note: For pricing & ordering information, please contact us at: sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities etc.) are available upon request.
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| Product Name | Doped Graphite Carbon Nitride |
| Formula | C3N4+xHy |
| Stock No. | NCZ-AM102-20 |
| Appearance | Off-white to Lemon yellowish-brown powder |
| Molecular Weight | Varies with composition |
| Density | 2.336 g/cm3 |
| Average Particle Size | 10-50 Micron (Customizable) |
| Specific Surface Area | >35 m2/g |
| Absorption | λmax 390 nm |
| Thermal Conductivity | 1.25 W/m·K |
| Doping | Iron (Fe), Copper (Cu), phosphorus (P), Boron (B), etc. (Ask for other Kind of customization) |
Doped Graphitic Carbon Nitride Powder RELATED INFORMATION
Storage Conditions: Airtight sealed, avoid light, and keep dry at room temperature. Please email us for the customization. Email: contact@nanochemazone.com
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| Product Name | Graphitic Carbon Nitride |
| Formula | C3N4+xHy |
| Stock No. | NCZ-AM101-19 |
| Appearance | Off-white to yellowish-brown powder |
| Molecular Weight | Varies with composition |
| Density | 2.336 g/cm3 |
| Average Particle Size | 10-50 Micron (Customizable) |
| Specific Surface Area | >35 m2/g |
| Absorption | λmax 390 nm |
| Thermal Conductivity | 1.25 W/m·K |
- Chemical Formula C3N4+xHy
- Chemical purity ≥ 99.5 wt.%PEM fuel cell catalyst – better cost solutions
- Color: off white yellow - brown
- Density 2.336 g/cm3
- Particle size, 1 to 50 microns
- Specific surface area > 35 m2/gL
- Thermal conductivity* 1.25 W/mK
- Temperature stability: In inert atmosphere, 650°C
g-C3N4 RELATED INFORMATION
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Monolayer Tungsten Disulfide (WS2) Quantum Dots
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| MF: | WS2 |
| Chemical Name: | Tungsten Disulfide |
| Purity: | > 99.99% |
| Size: | ≤ 10 nm (Size Customization possible) |
| Concentration: | 0.5 to 1 mg/ml (Customization possible) |
| Form: | Powder/Dispersion |
| Product Number: | NCZAM110 |
| CAS Number: | 12138-09-9 |
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| MF: | Ag |
| Chemical Name: | Silver Nanoprism |
| Purity: | > 99.99% |
| APS: | <40 nm (Size Customization possible) |
| Form: | Aqueous Nano Prism dispersion in 5 mM sodium borate |
| Product Number: | NCZD1004-22 |
| CAS Number | 7440-22-4 |
| Concentration | 0.02 mg/mL (Customizable) PVP Functionalized |
| Wavelength | 400 nm to1060 nm (Customizable) |
Note: We supply different size products of micro and Nano Size range dispersion according to the client’s requirements.
Description: Halide modified aqueous solution of silver plates with hexagonal and triangular morphologies have large light absorption and scattering cross sections and broadband plasmonic peaks. These particles have average thicknesses of only 5nm and with plasmonic peaks that, depending on the size of the particles, span the visible to IR regions of spectrum. These particles are suitable for bio-molecular detection, surface enhance Raman spectroscopy and photo-thermal cancer therapies.
Appearance : Colorful (yellow to violet) Particle Shape : 2D Triangular Plates Plasmonic Peaks : 400 - 900 nm Particle Size : thickness: 5 nm, width: 30 - 100 nm Size distribution : Strongly dependent on the size Concentration : 0.1 mM of Ag Solvent : Water Absorption : 2 OD/cm CAS Number : 7440-22-4
References : Frank, A.; Kitaev, V. Chemical Communications 2009, 46, 7170‐7172 Frank, A. J.; Cathcart, N.; Maly, K. E.; Kitaev, V. J. Chem. Ed. 2010, 87, 1098‐1101
