3D Graphene on Nickel/Copper Foam
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CAS No.: 7782-42-5 (graphene), 7440-02-0 (nickel)
| Sheet Resistance | <600Ω/sq |
| Custom Order | <300Ω/sq |
| Transparency | >95% |
| Product Name |
3D Graphene on Nickel/Copper Foam |
| Stock No. | NCZ-GSW-0022 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
Description
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
Shipping & Delivery
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| Stock No. | NCZ-GSW-0023 |
| Purity | > 99.9% |
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| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
| Sheet Resistance | <600Ω/sq |
| Custom Order | <300Ω/sq |
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CVD Graphene on SiO2 Substrate
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CVD Graphene on SiO2 Substrate/Wafer |
| Stock No. | NCZ-GSW-0018 |
| Purity | > 99.9% |
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| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
| Sheet Resistance | <600Ω/sq |
| Custom Order | <300Ω/sq |
| Transparency | >95% |
| CVD Graphene | Substrate |
| 1cm x 1cm | 1.5cm x 1.5cm, thickness: 300nm SiO2/700um Si |
| 1inch x 1inch | 3.0cm x 3.0cm, thickness: 300nm SiO2/700um Si |
| 3cm x 3cm | 3.5cm x 3.5cm, thickness: 300nm SiO2/700um Si |
| 7cm x 7cm | Diameter: 4inch, thickness: 300nm SiO2/600um Si |
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| Length | 10-20 μm (Customization possible) |
| Number of Layers | <30 (Customization possible) |
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| MF | C |
| Chemical Name |
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| Purity | ≥99.5% |
| Diameter | 5-10 µm |
| Thickness | 4-20 nm |
| Number of Layers | <30 (Customization possible) |
| Color | Black |
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| CAS Number | 7782-42-5 |
Graphene on Silicon Nitride TEM Grids
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| Product Name | Graphene on Silicon Nitride TEM Grids |
| Stock No. | NCZ-GSW-0012 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
| Sheet Resistance | 450±40 Ω/sq (1cm x1cm) |
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| Type | Thickness of the Graphene | Transparency | TEM Grid/AFM Substrate | Support Film |
| 1 Layer | ~ 0.35 nm | ~ 96.4% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
| 2 Layers | ~0.7 nm | ~92.7% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
| 3-5 Layers | 1.0-1.7 nm | ~85.8-90.4% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
| 6-8 Layers | 2.1-2.8 nm | ~78.5-83.2% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
Graphene on SiO2 Substrate
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| Product Name | Graphene on Ultra-Flat Thermal SiO2 Substrate |
| Stock No. | NCZ-GSW-0011 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
| Sheet Resistance | 450±40 Ω/sq (1cm x1cm) |
- Four thicknesses of CVD graphene: Available in either 1, 2, 3-5 or 6-8 layers
- The Ultra-flat Thermal SiO2 Substrate consists of a 200 nm thermally grown SiO2 film on an ultra-flat silicon wafer with a normal thickness of 675 µm. The size is 5mm x 5mm.
- Graphene coverage of the TEM grid is 75-95 %
| Type | Thickness of the Graphene | Transparency | Support Film |
| 1 Layer | ~0.35nm | ~96.4% | Ultra-flat Silicon |
| 2 Layers | ~0.7nm | ~92.7% | Ultra-flat Silicon |
| 3-5 Layers | 1.0-1.7nm | ~85.8-90.4% | Ultra-flat Silicon |
| 6-8 Layers | 2.1-2.8nm | ~78.5-83.2% | Ultra-flat Silicon |
Graphene on Ultra-Fine 200 Mesh Copper TEM Grids
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| Product Name | Graphene On Ultra-Fine 200 Mesh Copper TEM Grids |
| Stock No. | NCZ-GSW-0014 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
| Sheet Resistance | 450±40 Ω/sq (1cm x1cm) |
- Four thicknesses of CVD graphene: Available in either 1, 2, 3-5 or 6-8 layers
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| Type | Thickness of the Graphene | Transparency | TEM Grid/AFM Substrate | Support Film |
| 1 Layer | ~0.35 nm | ~96.4% | 200 Mesh Copper Grid | N/A |
| 2 Layers | ~0.7 nm | ~92.7% | 200 Mesh Copper Grid | N/A |
| 3-5 Layers | 1.0-1.7 nm | ~85.8-90.4% | 200 Mesh Copper Grid | N/A |
| 6-8 Layers | 2.1-2.8 nm | ~78.5-83.2% | 200 Mesh Copper Grid | N/A |
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| CAS Number | 7440-40-0 |
| Product Number | NCZC3002 |
| Concentration | 1mg/mL to 20 mg/mL (in stock), Concentration Customization is Possible |
| Carrier | Water, Ethanol, IPA, NMP, Toluene, Methanol, Dispersion Customization is Possible |
| APS | 5-10 nm (Customization is Possible) |
| Package Size | 1-100 mL (Customization is Possible) |
| Composition: | Hydroxylated Graphene Quantum Dots |
| Appearance: | Colorless solution |
| PL peak: | 480 nm (reference only, the actual value may vary) |
| Particle Size: | ＜10 nm |
| Concentration: | 1 mg/ml (available up to 20mg/ml) |
| Solution: | Water, a mixture of water and ethylene glycol (customization possible) |
| Purity: | > 99.9% |