Aminated Graphene Quantum Dots
₹0.00
| Product Number | Â NCZC3001 |
| CAS Number | Â Â 7440-40-0Â |
| Concentration | 1mg/mL to 20 mg/mL (in stock), Concentration Customization Possible |
| Carrier | Water, Ethanol, IPA, NMP, Toluene, Methanol, Dispersion Customization Possible |
| APS | Â 5-7 nm |
| Package Size | Â 1-100 mL |
CHARACTERIZATIONS
| Composition: |
Aminated Graphene Quantum Dots |
| Appearance: | Colorless solution |
| PL peak: | 440 nm (reference only, the actual value may vary) |
| Particle Size: | ＜ 7 nm |
| Concentration: | 1 mg/mL (available up to 20mg/mL) |
| Solution: | Water |
| Purity: | >99.9% |
Please Note: Graphene Quantum Dots dried Powder is also available in Hydrophilic and Hydrophobic form. Please contact us for Price and other parameters customization.
Description
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
Shipping & Delivery
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CAS No.: 7782-42-5 (graphene), 7440-50-8 (copper)
PREPARATION METHOD:Â CVD Method
WAFER STRUCTURE: Graphene on Copper Foil (both sides), Copper Foil 45 µm
CHARACTERIZATION & ANALYSIS
Predominantly Single-layer Graphene on Copper Substrate
| Sheet Resistance | <600Ω/sq |
| Custom Order | <300Ω/sq |
| Transparency | >95% |
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| Stock No. | NCZ-GSW-0016 |
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| Stock No. | NCZ-GSW-0019 |
| Purity | > 99.9% |
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| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
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CVD Graphene on Silicon Substrate
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| Stock No. | NCZ-GSW-0017 |
| Purity | > 99.9% |
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| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
| Sheet Resistance |  450±40 Ω/sq (1cm x1cm) |
| Transparency | >95% |
- Copper-based graphene is prepared by CVD method.
- Graphene is transferred from copper to silicon substrate.
SILICON WAFER:
| Wafer Thickness: | 525 µm, (customization is possible) |
| Resistivity: | <0.01 ohm-cm |
| Type/Dopant: | P/N |
| Orientation: | <100> (customization is possible) |
| Front Surface: | Polished |
| Back Surface: | Etched |
Graphene & Carbon Nanotubes Water Paste
| MF | C |
| Chemical Name |
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| Purity |  ≥99.5% |
| Diameter | Graphene 5-7 μm, CNT Outside Diameter: 50-80 nm, Inside Diameter: 5-15 nm (Customization possible) |
| Length | 10-20 μm (Customization possible) |
| Number of Layers | <30 (Customization possible) |
| Color | Black |
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Graphene Nanoplatelets Powder
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Please contact us for customization and price inquiry.
Graphene Nanoplatelets Powder
| MF | C |
| Chemical Name |
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| Purity | ≥99.5% |
| Diameter | 5-10 µm |
| Thickness | 4-20 nm |
| Number of Layers | <30 (Customization possible) |
| Color | Black |
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Graphene on Lacey Carbon 300 Mesh Copper TEM Grids
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| Product Name | Graphene On Lacey Carbon 300 Mesh Copper TEM Grids |
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| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
| Sheet Resistance |  450±40 Ω/sq (1cm x1cm) |
- Four thicknesses of CVD graphene:Â Available in either 1, 2, 3-5 or 6-8 layers
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| Type | Thickness of the Graphene | Transparency | TEM Grid/AFM Substrate | Support Film |
| 1 Layer | Â ~0.35 nm | Â ~96.4% | 300 Mesh Copper Grid | N/A |
| 2 Layers | Â ~0.7 nm | Â ~92.7% | 300 Mesh Copper Grid | N/A |
| 3-5 Layers | Â 1.0-1.7 nm | Â ~85.8-90.4% | 300 Mesh Copper Grid | N/A |
| 6-8 Layers | Â 2.1-2.8 nm | Â ~78.5-83.2% | 300 Mesh Copper Grid | N/A |