CVD Graphene on PET Substrate
₹0.00
| Product Name |
CVD Graphene on PET Substrate |
| Stock No. | NCZ-GSW-0019 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
PRODUCT DETAIL
CAS No.: 7782-42-5 (graphene), 25038-59-9 (PET)
PET Substrate: ~188µm thick
| Sheet Resistance | <600Ω/sq |
| Custom Order | <300Ω/sq |
| Transparency | >95% |
Description
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
Shipping & Delivery
Related products
3D Freestanding Graphene Foam
| Product Name |
3D Freestanding Graphene Foam |
| Stock No. | NCZ-GSW-0023 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
| Sheet Resistance | <600Ω/sq |
| Custom Order | <300Ω/sq |
| Transparency | >95% |
CVD Graphene on Copper Foil
CAS No.: 7782-42-5 (graphene), 7440-50-8 (copper)
PREPARATION METHOD: CVD Method
WAFER STRUCTURE: Graphene on Copper Foil (both sides), Copper Foil 45 µm
CHARACTERIZATION & ANALYSIS
Predominantly Single-layer Graphene on Copper Substrate
| Sheet Resistance | <600Ω/sq |
| Custom Order | <300Ω/sq |
| Transparency | >95% |
| Product Name |
CVD Graphene on Copper Foil |
| Stock No. | NCZ-GSW-0016 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
CVD Graphene on Quartz Substrate
| Product Name |
CVD Graphene on Quartz Substrate |
| Stock No. | NCZ-GSW-0020 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
| Sheet Resistance | <600Ω/sq |
| Custom Order | <300Ω/sq |
| Transparency | >95% |
| CVD Graphene | Substrate |
| 1cm x 1cm | Diameter: 1inch, Thickness: 3mm* |
| 1inch x 1inch | 30mm x 30mm, Thickness: 1mm |
CVD Graphene on SiO2 Substrate
| Product Name |
CVD Graphene on SiO2 Substrate/Wafer |
| Stock No. | NCZ-GSW-0018 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
| Sheet Resistance | <600Ω/sq |
| Custom Order | <300Ω/sq |
| Transparency | >95% |
| CVD Graphene | Substrate |
| 1cm x 1cm | 1.5cm x 1.5cm, thickness: 300nm SiO2/700um Si |
| 1inch x 1inch | 3.0cm x 3.0cm, thickness: 300nm SiO2/700um Si |
| 3cm x 3cm | 3.5cm x 3.5cm, thickness: 300nm SiO2/700um Si |
| 7cm x 7cm | Diameter: 4inch, thickness: 300nm SiO2/600um Si |
Graphene on Lacey Carbon 300 Mesh Copper TEM Grids
Graphene On Lacey Carbon 300 Mesh Copper TEM Grids
| Product Name | Graphene On Lacey Carbon 300 Mesh Copper TEM Grids |
| Stock No. | NCZ-GSW-0015 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
| Sheet Resistance | 450±40 Ω/sq (1cm x1cm) |
- Four thicknesses of CVD graphene: Available in either 1, 2, 3-5 or 6-8 layers
- TEM Substrate: Lacey carbon support film on 300 mesh copper TEM grid
- Graphene coverage of the TEM grid is better than 75%
| Type | Thickness of the Graphene | Transparency | TEM Grid/AFM Substrate | Support Film |
| 1 Layer | ~0.35 nm | ~96.4% | 300 Mesh Copper Grid | N/A |
| 2 Layers | ~0.7 nm | ~92.7% | 300 Mesh Copper Grid | N/A |
| 3-5 Layers | 1.0-1.7 nm | ~85.8-90.4% | 300 Mesh Copper Grid | N/A |
| 6-8 Layers | 2.1-2.8 nm | ~78.5-83.2% | 300 Mesh Copper Grid | N/A |
Graphene on Silicon Nitride TEM Grids
Graphene on Silicon Nitride TEM Grids
| Product Name | Graphene on Silicon Nitride TEM Grids |
| Stock No. | NCZ-GSW-0012 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
| Sheet Resistance | 450±40 Ω/sq (1cm x1cm) |
- Four thicknesses of CVD graphene: Available in either 1, 2, 3-5 or 6-8 layers
- TEM Substrate: 200 µm thick 3.0mm hexagonal silicon substrate with a 0.5x0.5mm aperture and 200nm thick silicon nitride membrane with approximately 6,400 2.5µm holes
- Graphene coverage of the TEM grid is > 75%
| Type | Thickness of the Graphene | Transparency | TEM Grid/AFM Substrate | Support Film |
| 1 Layer | ~ 0.35 nm | ~ 96.4% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
| 2 Layers | ~0.7 nm | ~92.7% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
| 3-5 Layers | 1.0-1.7 nm | ~85.8-90.4% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
| 6-8 Layers | 2.1-2.8 nm | ~78.5-83.2% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
Hydroxylated Graphene Quantum Dots
Hydroxylated Graphene Quantum Dots
| CAS Number | 7440-40-0 |
| Product Number | NCZC3002 |
| Concentration | 1mg/mL to 20 mg/mL (in stock), Concentration Customization is Possible |
| Carrier | Water, Ethanol, IPA, NMP, Toluene, Methanol, Dispersion Customization is Possible |
| APS | 5-10 nm (Customization is Possible) |
| Package Size | 1-100 mL (Customization is Possible) |
| Composition: | Hydroxylated Graphene Quantum Dots |
| Appearance: | Colorless solution |
| PL peak: | 480 nm (reference only, the actual value may vary) |
| Particle Size: | ＜10 nm |
| Concentration: | 1 mg/ml (available up to 20mg/ml) |
| Solution: | Water, a mixture of water and ethylene glycol (customization possible) |
| Purity: | > 99.9% |