CVD Graphene on PET Substrate
₹0.00
| Product Name |
CVD Graphene on PET Substrate |
| Stock No. | NCZ-GSW-0019 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
PRODUCT DETAIL
CAS No.: 7782-42-5 (graphene), 25038-59-9 (PET)
PET Substrate: ~188µm thick
| Sheet Resistance | <600Ω/sq |
| Custom Order | <300Ω/sq |
| Transparency | >95% |
Description
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
Shipping & Delivery
Related products
3D Graphene on Nickel/Copper Foam
 CAS No.: 7782-42-5 (graphene), 7440-02-0 (nickel)
| Sheet Resistance | <600Ω/sq |
| Custom Order | <300Ω/sq |
| Transparency | >95% |
| Product Name |
3D Graphene on Nickel/Copper Foam |
| Stock No. | NCZ-GSW-0022 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
Aminated Graphene Quantum Dots
| Product Number | Â NCZC3001 |
| CAS Number | Â Â 7440-40-0Â |
| Concentration | 1mg/mL to 20 mg/mL (in stock), Concentration Customization Possible |
| Carrier | Water, Ethanol, IPA, NMP, Toluene, Methanol, Dispersion Customization Possible |
| APS | Â 5-7 nm |
| Package Size | Â 1-100 mL |
| Composition: |
Aminated Graphene Quantum Dots |
| Appearance: | Colorless solution |
| PL peak: | 440 nm (reference only, the actual value may vary) |
| Particle Size: | ＜ 7 nm |
| Concentration: | 1 mg/mL (available up to 20mg/mL) |
| Solution: | Water |
| Purity: | >99.9% |
Carboxylated Graphene Quantum Dots
| Product Number | NCZC3003 |
| CAS Number          | 7440-40-0            |
| Concentration | 1mg/mL to 20 mg/mL (in stock), Concentration Customization is Possible |
| Carrier | Water, Ethanol, IPA, NMP, Toluene, Methanol, Dispersion Customization is Possible |
| APS | 5-10 nm (Customization is Possible) |
| Package Size | 1-100 mL (Customization is Possible) |
| Composition: |
Carboxylated Graphene Quantum Dots |
| Appearance: | Colorless solution |
| PL peak: | 480 nm (reference only, the actual value may vary) |
| Particle Size: | ＜10 nm |
| Concentration: | 1 mg/ml (available up to 20 mg/ml) |
| Solution: | Water, Toluene (customization possible) |
| Purity: | >99.9% |
CVD Graphene on Copper Foil
CAS No.: 7782-42-5 (graphene), 7440-50-8 (copper)
PREPARATION METHOD:Â CVD Method
WAFER STRUCTURE: Graphene on Copper Foil (both sides), Copper Foil 45 µm
CHARACTERIZATION & ANALYSIS
Predominantly Single-layer Graphene on Copper Substrate
| Sheet Resistance | <600Ω/sq |
| Custom Order | <300Ω/sq |
| Transparency | >95% |
| Product Name |
CVD Graphene on Copper Foil |
| Stock No. | NCZ-GSW-0016 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
CVD Graphene on Quartz Substrate
| Product Name |
CVD Graphene on  Quartz Substrate |
| Stock No. | NCZ-GSW-0020 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
| Sheet Resistance | <600Ω/sq |
| Custom Order | <300Ω/sq |
| Transparency | >95% |
| CVD Graphene | Substrate |
| 1cm x 1cm | Diameter: 1inch, Thickness: 3mm* |
| 1inch x 1inch | 30mm x 30mm, Thickness:Â 1mm |
Graphene & Carbon Nanotubes Water Paste
| MF | C |
| Chemical Name |
Graphene and Carbon Nanotubes Dispersion Mixture |
| Purity |  ≥99.5% |
| Diameter | Graphene 5-7 μm, CNT Outside Diameter: 50-80 nm, Inside Diameter: 5-15 nm (Customization possible) |
| Length | 10-20 μm (Customization possible) |
| Number of Layers | <30 (Customization possible) |
| Color | Black |
| Form | Dispersion/Paste/Solution |
| Product Number | NCZC1010 |
| CAS Number | 7782-42-5 |
Graphene on Silicon Nitride TEM Grids
Graphene on Silicon Nitride TEM GridsÂ
| Product Name | Graphene on Silicon Nitride TEM Grids |
| Stock No. | NCZ-GSW-0012 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
| Sheet Resistance |  450±40 Ω/sq (1cm x1cm) |
- Four thicknesses of CVD graphene:Â Available in either 1, 2, 3-5 or 6-8 layers
- TEM Substrate:  200 µm thick 3.0mm hexagonal silicon substrate with a 0.5x0.5mm aperture and 200nm thick silicon nitride membrane with approximately 6,400 2.5µm holes
- Graphene coverage of the TEM grid is > 75%
| Type | Thickness of the Graphene | Transparency | TEM Grid/AFM Substrate | Support Film |
| 1 Layer |  ~ 0.35 nm |  ~ 96.4% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
| 2 Layers |  ~0.7 nm |  ~92.7% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
| 3-5 Layers |  1.0-1.7 nm |  ~85.8-90.4% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
| 6-8 Layers |  2.1-2.8 nm |  ~78.5-83.2% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
Graphene on SiO2 Substrate
Graphene on Ultra-Flat Thermal SiO2Â Substrate
| Product Name | Graphene on Ultra-Flat Thermal SiO2 Substrate |
| Stock No. | NCZ-GSW-0011 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
| Sheet Resistance |  450±40 Ω/sq (1cm x1cm) |
- Four thicknesses of CVD graphene:Â Available in either 1, 2, 3-5 or 6-8 layers
- The Ultra-flat Thermal SiO2 Substrate consists of a 200 nm thermally grown SiO2 film on an ultra-flat silicon wafer with a normal thickness of 675 µm. The size is 5mm x 5mm.
- Graphene coverage of the TEM grid is 75-95 %
| Type | Thickness of the Graphene | Transparency | Support Film |
| 1 Layer | ~0.35nm | ~96.4% | Ultra-flat Silicon |
| 2 Layers | ~0.7nm | ~92.7% | Ultra-flat Silicon |
| 3-5 Layers | 1.0-1.7nm | ~85.8-90.4% | Ultra-flat Silicon |
| 6-8 Layers | 2.1-2.8nm | ~78.5-83.2% | Ultra-flat Silicon |