CVD Graphene on Silicon Substrate
₹0.00
| Product Name |
CVD Graphene On Silicon Substrate |
| Stock No. | NCZ-GSW-0017 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
| Sheet Resistance | 450±40 Ω/sq (1cm x1cm) |
PRODUCT DETAIL
CAS No.: 7782-42-5 (graphene), 7440-21-3 (silicon)
| Transparency | >95% |
PREPARATION METHOD:
- Copper-based graphene is prepared by CVD method.
- Graphene is transferred from copper to silicon substrate.
SILICON WAFER:
| Wafer Thickness: | 525 µm, (customization is possible) |
| Resistivity: | <0.01 ohm-cm |
| Type/Dopant: | P/N |
| Orientation: | <100> (customization is possible) |
| Front Surface: | Polished |
| Back Surface: | Etched |
Description
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
Shipping & Delivery
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| Purity | > 99.9% |
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| Sheet Resistance | 450±40 Ω/sq (1cm x1cm) |
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