Graphene on Silicon Nitride TEM Grids

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Graphene on Silicon Nitride TEM Grids 

Product Name Graphene on Silicon Nitride TEM Grids
Stock No. NCZ-GSW-0012
Purity > 99.9%
Graphene Film
FET Electron Mobility on Al2O3 2000 cm2/Vs
Hall Electron Mobility on SiO2/Si 4000 cm2/Vs
Sheet Resistance  450±40 Ω/sq (1cm x1cm)

PRODUCT DETAIL

Characteristics

  1. Four thicknesses of CVD graphene: Available in either 1, 2, 3-5 or 6-8 layers
  1. TEM Substrate:  200 µm thick 3.0mm hexagonal silicon substrate with a 0.5×0.5mm aperture and 200nm thick silicon nitride membrane with approximately 6,400 2.5µm holes
  1. Graphene coverage of the TEM grid is > 75%

Appearance

Solid hexagonal disk with a greenish hue. The graphene film appears as a near-transparent to light-grey film on the surface of the microporous silicon Nitride membrane.

Type Thickness of the Graphene Transparency TEM Grid/AFM Substrate Support Film
1 Layer  ~ 0.35 nm  ~ 96.4% 2.5 μm Hole Silicon Nitride Silicon Nitride
2 Layers  ~0.7 nm  ~92.7% 2.5 μm Hole Silicon Nitride Silicon Nitride
3-5 Layers  1.0-1.7 nm  ~85.8-90.4% 2.5 μm Hole Silicon Nitride Silicon Nitride
6-8 Layers  2.1-2.8 nm  ~78.5-83.2% 2.5 μm Hole Silicon Nitride Silicon Nitride

Please contact us for customization and price inquiry.

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Description

Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com

Customization:

If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.

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