Silicon Carbide Wafers N-Type (Phosphorus Doped)

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Silicon Carbide Wafers

SILICON CARBIDE CRYSTAL SUBSTRATE

Product Name Silicon Carbide Wafers
Product Code NCZ-WM-0019
CAS No. 409-21-2
Diameter 12” (304.8 mm), also available in 2, 3, 4, 5, 6″

Also available in 10 x 10 mm Size

Type N-Type
Doping Phosphorous/ Ask for customization
Crystal Orientation <100> /other orientations are also available
Surface Single/Both Side Polished
Thickness 275 μm /Ask for customization
Resistivity 1-10 ohm-cm
Crystal method CZ
RRG ≤12 %
Oxygen Contents 12.5-16.5 ppm
Carbon Contents ≤1 ppm

Please enquire for other wafers having different thicknesses, Diameter, Length, and sizes, etc.

If the item is shown is not exactly what you require please let us know by sending us a message

Description

Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com

Customization:

If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.

Shipping & Delivery