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CVD Graphene on Copper Foil
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CAS No.: 7782-42-5 (graphene), 7440-50-8 (copper)
PREPARATION METHOD:Â CVD Method
WAFER STRUCTURE: Graphene on Copper Foil (both sides), Copper Foil 45 µm
CHARACTERIZATION & ANALYSIS
Predominantly Single-layer Graphene on Copper Substrate
Sheet Resistance | <600Ω/sq |
Custom Order | <300Ω/sq |
Transparency | >95% |
Product Name |
CVD Graphene on Copper Foil |
Stock No. | NCZ-GSW-0016 |
Purity | > 99.9% |
Graphene Film | |
FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
Categories: CVD Graphene, Graphene Nanostructures
Description
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
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MF | C |
Chemical Name |
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Purity | ≥99.5% |
Diameter | 5-10 µm (ask for Customization) |
Thickness | 1-20 nm (ask for Customization) |
Number of Layers | <30 (Customization possible) |
Color | Black |
Form | Dispersion/Paste/Solution/Powder |
Product Number | NCZC1012 |
CAS Number | 7782-42-5 |
Graphene Nanoplatelets & Carbon Nanotubes Mix Paste
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MF: | C |
Chemical Name: |
Graphene and CNT Paste |
Purity: |  ≥99.5% |
Diameter | GNP 5-7 μm, CNT Outside Diameter: 50-80 nm, Inside Diameter: 5-15 nm (Customization possible) |
Length | 10-20 μm (Customization possible) |
Number of Layers: | <30 (Customization possible) |
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CAS Number | 7782-42-5 |
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Graphene Nanoplatelets Powder (> 99.5 wt%, D 5-10 um, < 20 layers)
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Graphene Nanoplatelets Powder
MF | C |
Chemical Name |
Graphene Nanoplatelets |
Purity | ≥99.5% |
Diameter | 5-10 µm |
Thickness | 4-20 nm |
Number of Layers | <30 (Customization possible) |
Color | Black |
Form | Dispersion/Paste/Solution/Powder |
Product Number | NCZC1007 |
CAS Number | 7782-42-5 |
Graphene on Lacey Carbon 300 Mesh Copper TEM Grids
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Graphene On Lacey Carbon 300 Mesh Copper TEM Grids
Product Name | Graphene On Lacey Carbon 300 Mesh Copper TEM Grids |
Stock No. | NCZ-GSW-0015 |
Purity | > 99.9% |
Graphene Film | |
FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
Sheet Resistance |  450±40 Ω/sq (1cm x1cm) |
- Four thicknesses of CVD graphene:Â Available in either 1, 2, 3-5 or 6-8 layers
- TEM Substrate:Â Lacey carbon support film on 300 mesh copper TEM grid
- Graphene coverage of the TEM grid is better than 75%
Type | Thickness of the Graphene | Transparency | TEM Grid/AFM Substrate | Support Film |
1 Layer | Â ~0.35 nm | Â ~96.4% | 300 Mesh Copper Grid | N/A |
2 Layers | Â ~0.7 nm | Â ~92.7% | 300 Mesh Copper Grid | N/A |
3-5 Layers | Â 1.0-1.7 nm | Â ~85.8-90.4% | 300 Mesh Copper Grid | N/A |
6-8 Layers | Â 2.1-2.8 nm | Â ~78.5-83.2% | 300 Mesh Copper Grid | N/A |
Graphene on SiO2 Substrate
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Graphene on Ultra-Flat Thermal SiO2Â Substrate
Product Name | Graphene on Ultra-Flat Thermal SiO2 Substrate |
Stock No. | NCZ-GSW-0011 |
Purity | > 99.9% |
Graphene Film | |
FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
Sheet Resistance |  450±40 Ω/sq (1cm x1cm) |
- Four thicknesses of CVD graphene:Â Available in either 1, 2, 3-5 or 6-8 layers
- The Ultra-flat Thermal SiO2 Substrate consists of a 200 nm thermally grown SiO2 film on an ultra-flat silicon wafer with a normal thickness of 675 µm. The size is 5mm x 5mm.
- Graphene coverage of the TEM grid is 75-95 %
Type | Thickness of the Graphene | Transparency | Support Film |
1 Layer | ~0.35nm | ~96.4% | Ultra-flat Silicon |
2 Layers | ~0.7nm | ~92.7% | Ultra-flat Silicon |
3-5 Layers | 1.0-1.7nm | ~85.8-90.4% | Ultra-flat Silicon |
6-8 Layers | 2.1-2.8nm | ~78.5-83.2% | Ultra-flat Silicon |
Graphene on Ultra-Fine 200 Mesh Copper TEM Grids
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Graphene coated TEM Grids
Product Name | Graphene On Ultra-Fine 200 Mesh Copper TEM Grids |
Stock No. | NCZ-GSW-0014 |
Purity | > 99.9% |
Graphene Film | |
FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
Sheet Resistance |  450±40 Ω/sq (1cm x1cm) |
- Four thicknesses of CVD graphene:Â Available in either 1, 2, 3-5 or 6-8 layers
- TEM Substrate:Â Microporous Copper TEM Grids with Beryllium-Copper Support Aperture
- Graphene coverage of the TEM grid is better than 75%
Type | Thickness of the Graphene | Transparency | TEM Grid/AFM Substrate | Support Film |
1 Layer | Â ~0.35 nm | Â ~96.4% | 200 Mesh Copper Grid | N/A |
2 Layers | Â ~0.7 nm | Â ~92.7% | 200 Mesh Copper Grid | N/A |
3-5 Layers | Â 1.0-1.7 nm | Â ~85.8-90.4% | 200 Mesh Copper Grid | N/A |
6-8 Layers | Â 2.1-2.8 nm | Â ~78.5-83.2% | 200 Mesh Copper Grid | N/A |
Hydroxylated Graphene Quantum Dots
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Hydroxylated Graphene Quantum Dots
CAS Number          | 7440-40-0 |
Product Number | NCZC3002 |
Concentration | 1mg/mL to 20 mg/mL (in stock), Concentration Customization is Possible |
Carrier | Water, Ethanol, IPA, NMP, Toluene, Methanol, Dispersion Customization is Possible |
APS | 5-10 nm (Customization is Possible) |
Package Size | 1-100 mL (Customization is Possible) |
Composition: | Hydroxylated Graphene Quantum Dots |
Appearance: | Colorless solution |
PL peak: | 480 nm (reference only, the actual value may vary) |
Particle Size: | <10 nm |
Concentration: | 1 mg/ml (available up to 20mg/ml) |
Solution: | Water, a mixture of water and ethylene glycol (customization possible) |
Purity: | > 99.9% |