CVD Graphene on SiO2 Substrate
₹0.00
| Product Name |
CVD Graphene on SiO2 Substrate/Wafer |
| Stock No. | NCZ-GSW-0018 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
PRODUCT DETAIL
CAS No.: 7782-42-5 (graphene), 7631-86-9 (silicon dioxide), 7440-21-3 (silicon)
| Sheet Resistance | <600Ω/sq |
| Custom Order | <300Ω/sq |
| Transparency | >95% |
GRAPHENE ON SILICON DIOXIDE (300NM)/SI SUBSTRATE (P-TYPE, 1-10 Ω·CM)Â
| CVD Graphene | Substrate |
| 1cm x 1cm | 1.5cm x 1.5cm, thickness: 300nm SiO2/700um Si |
| 1inch x 1inch | 3.0cm x 3.0cm, thickness:Â 300nm SiO2/700um Si |
| 3cm x 3cm | 3.5cm x 3.5cm, thickness:Â 300nm SiO2/700um Si |
| 7cm x 7cm | Diameter: 4inch, thickness:Â 300nm SiO2/600um Si |
Description
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
Shipping & Delivery
Related products
CVD Graphene on Copper Foil
CAS No.: 7782-42-5 (graphene), 7440-50-8 (copper)
PREPARATION METHOD:Â CVD Method
WAFER STRUCTURE: Graphene on Copper Foil (both sides), Copper Foil 45 µm
CHARACTERIZATION & ANALYSIS
Predominantly Single-layer Graphene on Copper Substrate
| Sheet Resistance | <600Ω/sq |
| Custom Order | <300Ω/sq |
| Transparency | >95% |
| Product Name |
CVD Graphene on Copper Foil |
| Stock No. | NCZ-GSW-0016 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
Graphene Nanoplatelets & Carbon Nanotubes Mix Paste
| MF: | C |
| Chemical Name: |
Graphene and CNT Paste |
| Purity: |  ≥99.5% |
| Diameter | GNP 5-7 μm, CNT Outside Diameter: 50-80 nm, Inside Diameter: 5-15 nm (Customization possible) |
| Length | 10-20 μm (Customization possible) |
| Number of Layers: | <30 (Customization possible) |
| Color | Black |
| Form: | Dispersion/Paste/Solution |
| Product Number: | #NCZC1011 |
| CAS Number | 7782-42-5 |
| Solvent | NMP, DMF, DMSO, Acetonitrile, etc. |
Graphene Nanoplatelets Dispersion
| M | C |
| Chemical Name |
Graphene Nanoplatelets Paste and Dispersion |
| Purity | ≥99.5% |
| Diameter | 1-10 µm (Customization possible) |
| Thickness | 2-20 nm (Customization possible) |
| Number of Layers | <30 (Customization possible) |
| Color | Black |
| Form | Dispersion/Paste/Solution |
| Product Number | NCZC1009 |
| CAS Number | 7782-42-5 |
Graphene Nanoplatelets Powder
Graphene Nanoplatelets Powder (> 99.5 wt%, D 5-10 um, < 20 layers)
Please contact us for customization and price inquiry.
Graphene Nanoplatelets Powder
| MF | C |
| Chemical Name |
Graphene Nanoplatelets |
| Purity | ≥99.5% |
| Diameter | 5-10 µm |
| Thickness | 4-20 nm |
| Number of Layers | <30 (Customization possible) |
| Color | Black |
| Form | Dispersion/Paste/Solution/Powder |
| Product Number | NCZC1007 |
| CAS Number | 7782-42-5 |
Graphene on SiO2 Substrate
Graphene on Ultra-Flat Thermal SiO2Â Substrate
| Product Name | Graphene on Ultra-Flat Thermal SiO2 Substrate |
| Stock No. | NCZ-GSW-0011 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
| Sheet Resistance |  450±40 Ω/sq (1cm x1cm) |
- Four thicknesses of CVD graphene:Â Available in either 1, 2, 3-5 or 6-8 layers
- The Ultra-flat Thermal SiO2 Substrate consists of a 200 nm thermally grown SiO2 film on an ultra-flat silicon wafer with a normal thickness of 675 µm. The size is 5mm x 5mm.
- Graphene coverage of the TEM grid is 75-95 %
| Type | Thickness of the Graphene | Transparency | Support Film |
| 1 Layer | ~0.35nm | ~96.4% | Ultra-flat Silicon |
| 2 Layers | ~0.7nm | ~92.7% | Ultra-flat Silicon |
| 3-5 Layers | 1.0-1.7nm | ~85.8-90.4% | Ultra-flat Silicon |
| 6-8 Layers | 2.1-2.8nm | ~78.5-83.2% | Ultra-flat Silicon |
Graphene on Ultra-Fine 200 Mesh Copper TEM Grids
Graphene coated TEM Grids
| Product Name | Graphene On Ultra-Fine 200 Mesh Copper TEM Grids |
| Stock No. | NCZ-GSW-0014 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
| Sheet Resistance |  450±40 Ω/sq (1cm x1cm) |
- Four thicknesses of CVD graphene:Â Available in either 1, 2, 3-5 or 6-8 layers
- TEM Substrate:Â Microporous Copper TEM Grids with Beryllium-Copper Support Aperture
- Graphene coverage of the TEM grid is better than 75%
| Type | Thickness of the Graphene | Transparency | TEM Grid/AFM Substrate | Support Film |
| 1 Layer | Â ~0.35 nm | Â ~96.4% | 200 Mesh Copper Grid | N/A |
| 2 Layers | Â ~0.7 nm | Â ~92.7% | 200 Mesh Copper Grid | N/A |
| 3-5 Layers | Â 1.0-1.7 nm | Â ~85.8-90.4% | 200 Mesh Copper Grid | N/A |
| 6-8 Layers | Â 2.1-2.8 nm | Â ~78.5-83.2% | 200 Mesh Copper Grid | N/A |
