CVD Graphene on SiO2 Substrate
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| Product Name |
CVD Graphene on SiO2 Substrate/Wafer |
| Stock No. | NCZ-GSW-0018 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
PRODUCT DETAIL
CAS No.: 7782-42-5 (graphene), 7631-86-9 (silicon dioxide), 7440-21-3 (silicon)
| Sheet Resistance | <600Ω/sq |
| Custom Order | <300Ω/sq |
| Transparency | >95% |
GRAPHENE ON SILICON DIOXIDE (300NM)/SI SUBSTRATE (P-TYPE, 1-10 Ω·CM)Â
| CVD Graphene | Substrate |
| 1cm x 1cm | 1.5cm x 1.5cm, thickness: 300nm SiO2/700um Si |
| 1inch x 1inch | 3.0cm x 3.0cm, thickness:Â 300nm SiO2/700um Si |
| 3cm x 3cm | 3.5cm x 3.5cm, thickness:Â 300nm SiO2/700um Si |
| 7cm x 7cm | Diameter: 4inch, thickness:Â 300nm SiO2/600um Si |
Description
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
Shipping & Delivery
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| Purity | > 99.9% |
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| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
| Sheet Resistance | <600Ω/sq |
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| APS | 5-10 nm |
| Package Size | 1-100 mL ( Large Volume packs are also available) |
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CVD Graphene on Copper Foil
CAS No.: 7782-42-5 (graphene), 7440-50-8 (copper)
PREPARATION METHOD:Â CVD Method
WAFER STRUCTURE: Graphene on Copper Foil (both sides), Copper Foil 45 µm
CHARACTERIZATION & ANALYSIS
Predominantly Single-layer Graphene on Copper Substrate
| Sheet Resistance | <600Ω/sq |
| Custom Order | <300Ω/sq |
| Transparency | >95% |
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| Stock No. | NCZ-GSW-0016 |
| Purity | > 99.9% |
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| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
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Graphene on Lacey Carbon 300 Mesh Copper TEM Grids
Graphene On Lacey Carbon 300 Mesh Copper TEM Grids
| Product Name | Graphene On Lacey Carbon 300 Mesh Copper TEM Grids |
| Stock No. | NCZ-GSW-0015 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
| Sheet Resistance |  450±40 Ω/sq (1cm x1cm) |
- Four thicknesses of CVD graphene:Â Available in either 1, 2, 3-5 or 6-8 layers
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- Graphene coverage of the TEM grid is better than 75%
| Type | Thickness of the Graphene | Transparency | TEM Grid/AFM Substrate | Support Film |
| 1 Layer | Â ~0.35 nm | Â ~96.4% | 300 Mesh Copper Grid | N/A |
| 2 Layers | Â ~0.7 nm | Â ~92.7% | 300 Mesh Copper Grid | N/A |
| 3-5 Layers | Â 1.0-1.7 nm | Â ~85.8-90.4% | 300 Mesh Copper Grid | N/A |
| 6-8 Layers | Â 2.1-2.8 nm | Â ~78.5-83.2% | 300 Mesh Copper Grid | N/A |
Graphene on Silicon Nitride TEM Grids
Graphene on Silicon Nitride TEM GridsÂ
| Product Name | Graphene on Silicon Nitride TEM Grids |
| Stock No. | NCZ-GSW-0012 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
| Sheet Resistance |  450±40 Ω/sq (1cm x1cm) |
- Four thicknesses of CVD graphene:Â Available in either 1, 2, 3-5 or 6-8 layers
- TEM Substrate:  200 µm thick 3.0mm hexagonal silicon substrate with a 0.5x0.5mm aperture and 200nm thick silicon nitride membrane with approximately 6,400 2.5µm holes
- Graphene coverage of the TEM grid is > 75%
| Type | Thickness of the Graphene | Transparency | TEM Grid/AFM Substrate | Support Film |
| 1 Layer |  ~ 0.35 nm |  ~ 96.4% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
| 2 Layers |  ~0.7 nm |  ~92.7% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
| 3-5 Layers |  1.0-1.7 nm |  ~85.8-90.4% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
| 6-8 Layers |  2.1-2.8 nm |  ~78.5-83.2% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
