Doped Graphitic Carbon Nitride (g-C3N4)
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Doped Graphite Carbon Nitride
| Product Name | Doped Graphite Carbon Nitride |
| Formula | C3N4+xHy |
| Stock No. | NCZ-AM102-20 |
| Appearance | Off-white to Lemon yellowish-brown powder |
| Molecular Weight | Varies with composition |
| Density | 2.336 g/cm3 |
| Average Particle Size | 10-50 Micron (Customizable) |
| Specific Surface Area | >35 m2/g |
| Absorption | λmax 390 nm |
| Thermal Conductivity | 1.25 W/m·K |
| Doping | Iron (Fe), Copper (Cu), phosphorus (P), Boron (B), etc. (Ask for other Kind of customization) |
Doped Graphitic Carbon Nitride Powder RELATED INFORMATION
Storage Conditions:
Airtight sealed, avoid light, and keep dry at room temperature.
Please email us for the customization.
Email: contact@nanochemazone.com
Description
Note: For pricing & ordering information, please contact us at:Â Â sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
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Hexagonal Boron Nitride (H-BN) on Si/SiO2
Hexagonal Boron Nitride (H-BN) on Si/SiO2
| Product Name | Monolayer h-BN |
| Transparency | > 97% |
| hBN Coverage | 100% with sporadic adlayers |
| Raman Peak | 1370 /cm-1 |
| Bandgap | 5.97 eV |
| Grain size | >4 μm |
| Si/SiO2 Substrate | |
| Type/Doing | P/B |
| Wafer Thickness | 500 +/- 50 μm |
| Oxide Thickness | 300 nm |
| Resistivity | 1-10 (Ω -cm) |
| Orientation | <1-0-0> |
| Growth Method | CZ |
| Metal Impurities | 1.00e10 – 5.00e10 (at/cm2) |
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