Hexagonal Boron Nitride (H-BN) on Si/SiO2
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Hexagonal Boron Nitride (H-BN) on Si/SiO2
| Product Name |
Monolayer h-BN |
| Transparency | > 97% |
| hBN Coverage | 100% with sporadic adlayers |
| Raman Peak | 1370 /cm-1 |
| Bandgap | 5.97 eV |
| Grain size | >4 μm |
Si/SiO2 Substrate |
|
| Type/Doing | P/B |
| Wafer Thickness | 500 +/- 50 μm |
| Oxide Thickness | 300 nm |
| Resistivity | 1-10 (Ω -cm) |
| Orientation | <1-0-0> |
| Growth Method | CZ |
| Metal Impurities | 1.00e10 – 5.00e10 (at/cm2) |
Note: For pricing & ordering information, please contact us at:Â sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities etc.) are available upon request.
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