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Pretreated Graphene on PET/PMMA Substrate
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Product Name |
Graphene-coated PMMA and PET |
Stock No. | NCZ-GSW-0021 |
Purity | > 99.9% |
Graphene Film | |
FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
CAS No.: 7782-42-5 (graphene)
Sheet Resistance | <600Ω/sq |
Custom Order | <300Ω/sq |
Transparency | >95% |
Category: CVD Graphene
Description
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
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3D Freestanding Graphene Foam
₹0.00
Product Name |
3D Freestanding Graphene Foam |
Stock No. | NCZ-GSW-0023 |
Purity | > 99.9% |
Graphene Film | |
FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
Sheet Resistance | <600Ω/sq |
Custom Order | <300Ω/sq |
Transparency | >95% |
CVD Graphene on Copper Foil
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CAS No.: 7782-42-5 (graphene), 7440-50-8 (copper)
PREPARATION METHOD:Â CVD Method
WAFER STRUCTURE: Graphene on Copper Foil (both sides), Copper Foil 45 µm
CHARACTERIZATION & ANALYSIS
Predominantly Single-layer Graphene on Copper Substrate
Sheet Resistance | <600Ω/sq |
Custom Order | <300Ω/sq |
Transparency | >95% |
Product Name |
CVD Graphene on Copper Foil |
Stock No. | NCZ-GSW-0016 |
Purity | > 99.9% |
Graphene Film | |
FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
CVD Graphene on PET Substrate
₹0.00
Product Name |
CVD Graphene on PET Substrate |
Stock No. | NCZ-GSW-0019 |
Purity | > 99.9% |
Graphene Film | |
FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
Sheet Resistance | <600Ω/sq |
Custom Order | <300Ω/sq |
Transparency | >95% |
CVD Graphene on Silicon Substrate
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Product Name |
CVD Graphene On Silicon Substrate |
Stock No. | NCZ-GSW-0017 |
Purity | > 99.9% |
Graphene Film | |
FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
Sheet Resistance |  450±40 Ω/sq (1cm x1cm) |
Transparency | >95% |
- Copper-based graphene is prepared by CVD method.
- Graphene is transferred from copper to silicon substrate.
SILICON WAFER:
Wafer Thickness: | 525 µm, (customization is possible) |
Resistivity: | <0.01 ohm-cm |
Type/Dopant: | P/N |
Orientation: | <100> (customization is possible) |
Front Surface: | Polished |
Back Surface: | Etched |
CVD Graphene on SiO2 Substrate
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Product Name |
CVD Graphene on SiO2 Substrate/Wafer |
Stock No. | NCZ-GSW-0018 |
Purity | > 99.9% |
Graphene Film | |
FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
Sheet Resistance | <600Ω/sq |
Custom Order | <300Ω/sq |
Transparency | >95% |
CVD Graphene | Substrate |
1cm x 1cm | 1.5cm x 1.5cm, thickness: 300nm SiO2/700um Si |
1inch x 1inch | 3.0cm x 3.0cm, thickness:Â 300nm SiO2/700um Si |
3cm x 3cm | 3.5cm x 3.5cm, thickness:Â 300nm SiO2/700um Si |
7cm x 7cm | Diameter: 4inch, thickness:Â 300nm SiO2/600um Si |
Graphene on Lacey Carbon 300 Mesh Copper TEM Grids
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Graphene On Lacey Carbon 300 Mesh Copper TEM Grids
Product Name | Graphene On Lacey Carbon 300 Mesh Copper TEM Grids |
Stock No. | NCZ-GSW-0015 |
Purity | > 99.9% |
Graphene Film | |
FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
Sheet Resistance |  450±40 Ω/sq (1cm x1cm) |
- Four thicknesses of CVD graphene:Â Available in either 1, 2, 3-5 or 6-8 layers
- TEM Substrate:Â Lacey carbon support film on 300 mesh copper TEM grid
- Graphene coverage of the TEM grid is better than 75%
Type | Thickness of the Graphene | Transparency | TEM Grid/AFM Substrate | Support Film |
1 Layer | Â ~0.35 nm | Â ~96.4% | 300 Mesh Copper Grid | N/A |
2 Layers | Â ~0.7 nm | Â ~92.7% | 300 Mesh Copper Grid | N/A |
3-5 Layers | Â 1.0-1.7 nm | Â ~85.8-90.4% | 300 Mesh Copper Grid | N/A |
6-8 Layers | Â 2.1-2.8 nm | Â ~78.5-83.2% | 300 Mesh Copper Grid | N/A |
Graphene on Silicon Nitride TEM Grids
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Graphene on Silicon Nitride TEM GridsÂ
Product Name | Graphene on Silicon Nitride TEM Grids |
Stock No. | NCZ-GSW-0012 |
Purity | > 99.9% |
Graphene Film | |
FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
Sheet Resistance |  450±40 Ω/sq (1cm x1cm) |
- Four thicknesses of CVD graphene:Â Available in either 1, 2, 3-5 or 6-8 layers
- TEM Substrate:  200 µm thick 3.0mm hexagonal silicon substrate with a 0.5x0.5mm aperture and 200nm thick silicon nitride membrane with approximately 6,400 2.5µm holes
- Graphene coverage of the TEM grid is > 75%
Type | Thickness of the Graphene | Transparency | TEM Grid/AFM Substrate | Support Film |
1 Layer |  ~ 0.35 nm |  ~ 96.4% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
2 Layers |  ~0.7 nm |  ~92.7% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
3-5 Layers |  1.0-1.7 nm |  ~85.8-90.4% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
6-8 Layers |  2.1-2.8 nm |  ~78.5-83.2% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
Graphene on SiO2 Substrate
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Graphene on Ultra-Flat Thermal SiO2Â Substrate
Product Name | Graphene on Ultra-Flat Thermal SiO2 Substrate |
Stock No. | NCZ-GSW-0011 |
Purity | > 99.9% |
Graphene Film | |
FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
Sheet Resistance |  450±40 Ω/sq (1cm x1cm) |
- Four thicknesses of CVD graphene:Â Available in either 1, 2, 3-5 or 6-8 layers
- The Ultra-flat Thermal SiO2 Substrate consists of a 200 nm thermally grown SiO2 film on an ultra-flat silicon wafer with a normal thickness of 675 µm. The size is 5mm x 5mm.
- Graphene coverage of the TEM grid is 75-95 %
Type | Thickness of the Graphene | Transparency | Support Film |
1 Layer | ~0.35nm | ~96.4% | Ultra-flat Silicon |
2 Layers | ~0.7nm | ~92.7% | Ultra-flat Silicon |
3-5 Layers | 1.0-1.7nm | ~85.8-90.4% | Ultra-flat Silicon |
6-8 Layers | 2.1-2.8nm | ~78.5-83.2% | Ultra-flat Silicon |