Pretreated Graphene on PET/PMMA Substrate
₹0.00
| Product Name |
Graphene-coated PMMA and PET |
| Stock No. | NCZ-GSW-0021 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
CAS No.: 7782-42-5 (graphene)
| Sheet Resistance | <600Ω/sq |
| Custom Order | <300Ω/sq |
| Transparency | >95% |
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
Related products
3D Freestanding Graphene Foam
| Product Name |
3D Freestanding Graphene Foam |
| Stock No. | NCZ-GSW-0023 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
PRODUCT DETAIL
CAS No.: 7440-44-0
Density: ~ 0.2g/cm3
Thickness: Â ~ 0.5mm
Number of layers: ~ 8 layers
| Sheet Resistance | <600Ω/sq |
| Custom Order | <300Ω/sq |
| Transparency | >95% |
3D Graphene on Nickel/Copper Foam
 CAS No.: 7782-42-5 (graphene), 7440-02-0 (nickel)
| Sheet Resistance | <600Ω/sq |
| Custom Order | <300Ω/sq |
| Transparency | >95% |
| Product Name |
3D Graphene on Nickel/Copper Foam |
| Stock No. | NCZ-GSW-0022 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
CVD Graphene on Copper Foil
CAS No.: 7782-42-5 (graphene), 7440-50-8 (copper)
PREPARATION METHOD:Â CVD Method
WAFER STRUCTURE: Graphene on Copper Foil (both sides), Copper Foil 45 µm
CHARACTERIZATION & ANALYSIS
Predominantly Single-layer Graphene on Copper Substrate
| Sheet Resistance | <600Ω/sq |
| Custom Order | <300Ω/sq |
| Transparency | >95% |
| Product Name |
CVD Graphene on Copper Foil |
| Stock No. | NCZ-GSW-0016 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
CVD Graphene on PET Substrate
| Product Name |
CVD Graphene on PET Substrate |
| Stock No. | NCZ-GSW-0019 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
PRODUCT DETAIL
CAS No.: 7782-42-5 (graphene), 25038-59-9 (PET)
PET Substrate: ~188µm thick
| Sheet Resistance | <600Ω/sq |
| Custom Order | <300Ω/sq |
| Transparency | >95% |
CVD Graphene on Silicon Substrate
| Product Name |
CVD Graphene On Silicon Substrate |
| Stock No. | NCZ-GSW-0017 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
| Sheet Resistance |  450±40 Ω/sq (1cm x1cm) |
PRODUCT DETAIL
CAS No.: 7782-42-5 (graphene), 7440-21-3 (silicon)
| Transparency | >95% |
PREPARATION METHOD:
- Copper-based graphene is prepared by CVD method.
- Graphene is transferred from copper to silicon substrate.
SILICON WAFER:
| Wafer Thickness: | 525 µm, (customization is possible) |
| Resistivity: | <0.01 ohm-cm |
| Type/Dopant: | P/N |
| Orientation: | <100> (customization is possible) |
| Front Surface: | Polished |
| Back Surface: | Etched |
CVD Graphene on SiO2 Substrate
| Product Name |
CVD Graphene on SiO2 Substrate/Wafer |
| Stock No. | NCZ-GSW-0018 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
PRODUCT DETAIL
CAS No.: 7782-42-5 (graphene), 7631-86-9 (silicon dioxide), 7440-21-3 (silicon)
| Sheet Resistance | <600Ω/sq |
| Custom Order | <300Ω/sq |
| Transparency | >95% |
GRAPHENE ON SILICON DIOXIDE (300NM)/SI SUBSTRATE (P-TYPE, 1-10 Ω·CM)Â
| CVD Graphene | Substrate |
| 1cm x 1cm | 1.5cm x 1.5cm, thickness: 300nm SiO2/700um Si |
| 1inch x 1inch | 3.0cm x 3.0cm, thickness:Â 300nm SiO2/700um Si |
| 3cm x 3cm | 3.5cm x 3.5cm, thickness:Â 300nm SiO2/700um Si |
| 7cm x 7cm | Diameter: 4inch, thickness:Â 300nm SiO2/600um Si |
Graphene on Silicon Nitride TEM Grids
Graphene on Silicon Nitride TEM GridsÂ
| Product Name | Graphene on Silicon Nitride TEM Grids |
| Stock No. | NCZ-GSW-0012 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
| Sheet Resistance |  450±40 Ω/sq (1cm x1cm) |
PRODUCT DETAIL
Characteristics
- Four thicknesses of CVD graphene:Â Available in either 1, 2, 3-5 or 6-8 layers
- TEM Substrate:  200 µm thick 3.0mm hexagonal silicon substrate with a 0.5x0.5mm aperture and 200nm thick silicon nitride membrane with approximately 6,400 2.5µm holes
- Graphene coverage of the TEM grid is > 75%
Appearance
Solid hexagonal disk with a greenish hue. The graphene film appears as a near-transparent to light-grey film on the surface of the microporous silicon Nitride membrane.
| Type | Thickness of the Graphene | Transparency | TEM Grid/AFM Substrate | Support Film |
| 1 Layer |  ~ 0.35 nm |  ~ 96.4% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
| 2 Layers |  ~0.7 nm |  ~92.7% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
| 3-5 Layers |  1.0-1.7 nm |  ~85.8-90.4% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
| 6-8 Layers |  2.1-2.8 nm |  ~78.5-83.2% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
Please contact us for customization and price inquiry.
Graphene on SiO2 Substrate
Graphene on Ultra-Flat Thermal SiO2Â Substrate
| Product Name | Graphene on Ultra-Flat Thermal SiO2 Substrate |
| Stock No. | NCZ-GSW-0011 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
| Sheet Resistance |  450±40 Ω/sq (1cm x1cm) |
 PRODUCT DETAIL
Characteristics
- Four thicknesses of CVD graphene:Â Available in either 1, 2, 3-5 or 6-8 layers
- The Ultra-flat Thermal SiO2 Substrate consists of a 200 nm thermally grown SiO2 film on an ultra-flat silicon wafer with a normal thickness of 675 µm. The size is 5mm x 5mm.
- Graphene coverage of the TEM grid is 75-95 %
| Type | Thickness of the Graphene | Transparency | Support Film |
| 1 Layer | ~0.35nm | ~96.4% | Ultra-flat Silicon |
| 2 Layers | ~0.7nm | ~92.7% | Ultra-flat Silicon |
| 3-5 Layers | 1.0-1.7nm | ~85.8-90.4% | Ultra-flat Silicon |
| 6-8 Layers | 2.1-2.8nm | ~78.5-83.2% | Ultra-flat Silicon |
Please contact us for customization and price inquiry.