Single Crystal silicon-silicon dioxide Wafer   

Product Name: Single Crystal silicon-silicon dioxide Wafer   

Product Name	Single Crystal silicon-silicon dioxide Wafer P-type (4 inches)
Cat No.	NCZ-NSC318/20
Día	100 mm (4 inches)
Orientation	<100>
Wafer thickness	500 micrometer
Resistivity	<0.01
Polished	Front Side Polished
Thickness	300 nm (dry)
Purity	99.9%
Formula	Si/SiO2

Single Crystal silicon-silicon dioxide Wafer P-type Description :

Provided in a single wafer case

Silicon oxide wafer SIO2 thin-film among semiconductor technology, SiO2 thin film layers are mainly used as dielectric material and more recently, they are integrated with MEMS (Micro Electro Mechanical Systems) devices. The simplest way to produce silicon oxide layers on silicon wafers is to oxidize silicon with oxygen.

Single Crystal silicon-silicon dioxide Wafer RELATED INFORMATION

Storage Conditions:

Airtight sealed, avoid light and keep dry at room temperature.

Please email us for the customization.

Email: contact@nanochemazone.com

Note: We supply different size ranges of nano and micron size powder as per the client’s requirements and also accept customization in various parameters.