Single Crystal Silicon Wafer N-Type
₹0.00
Single Crystal Silicon Wafer N-Type (1 inch)
Product Name: Single Crystal Silicon Wafer N-Type (1 inch)
| Product Name | Single Crystal Silicon Wafer N-Type (1 inch) |
| Cat No. | NCZ-NSC330/20 |
| Size | 1 inch |
| Thickness | 300-380 micro-meter |
| Type | N-type |
| Dopant | Phosphorus |
| Resistivity | 1-10 ohm/cm |
| Surface | Single side polished |
| Boling Point | 2355 °C (lit.) |
| Melting Point | 1240 °C,1410 °C (lit.) |
| Density | 2.33 g/mL at 25 °C (lit.) |
| Semiconductor Properties | <100>, N-type |
| SMILES string | [Si] |
Physical properties:
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 100 – 3000 Ωcm.
Oxygen content: ≤ 1~1.8 x 1018 /cm3; Carbon content: ≤ 5 x 1016 /cm3; Boule diameter: 1~8 ″
Description:
Single Crystal Silicon Wafer N-Type (1 inch). We have heated polished doped single-crystal silicon wafers in a single-mode microwave cavity to temperatures where surface to surface bonding occurred. The absorption of microwaves and heating of the wafers is attributed to the inclusion of n-type or p-type impurities into these substrates.
A cylindrical cavity TM (sub 010) standing wave mode was used to irradiate samples of various geometry at positions of high magnetic field. This process was conducted in a vacuum to exclude plasma effects.
This initial study suggests that the inclusion of impurities in single crystal silicon significantly improved its microwave absorption (loss factor) to a point where heating silicon wafers directly can be accomplished in minimal time. Bonding of these substrates, however, occurs only at points of intimate surface to surface contact. The inclusion of a thin metallic layer on the surfaces enhances the bonding process.
Please email us for the customization.
Email: contact@nanochemazone.com
Please contact us for customization and price inquiry
Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in the various parameters
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
You must be logged in to post a review.
Related products
D3O 10 mm Solid Sheet 10″x14.5″ (AERO) Unskived
D3O Sheets
D3O Sheets Also available in 2mm, 4mm, and 6mm Thickness.D3O Sheets with shock-absorbing properties
D3O® uses patented, patent-pending, and proprietary technologies to make rate-sensitive, soft, flexible materials with shock-absorbing properties.D3O Sheets D3O® foam sheets can be cut to size and applied to the body as an under-wrap to provide added protection to select body parts or to contusions without leaving the field for more than a few seconds. D3O® foam is soft and flexible and can be cut to any shape to match your specific needs.
Add D3O®’s patented impact protection to existing equipment by cutting your own padding. D3O® foams are made from cutting-edge smart molecules that remain soft and flexible until a force is applied causing the material to react on the molecular level by seizing up and binding together providing uncompromising impact protection.
D3O® set solid and mesh sheets reduce up to three times as much force as similar foam padding without the added bulk. Only 4mm of solid D3O® AERO out preforms 20mm of EVA foam in transmitted force testing by up to 60%. More than doubling the protective layer 10mm unskived AERO sheets are the ultimate side-line wrap.
To learn more about D3O® foam sheets and to get a glimpse at the raw testing data click the link below.
D3O-solid-mesh-sheet Pure Platinum Metal Sheet/Foil
Nickel Silicide Powder
Nickel Silicide Powder
Product Name: Â Nickel Silicide Powder
| Product | Nickel Silicide Powder |
| CAS No | 12059-14-2 |
| Appearance | White Powder |
| Purity | 99.9% |
| APS | 1 – 5 Microns (Can be customized) |
| Ingredient | Ni2Si |
| Product Code | NCZ-NSC-133/20 |
Nickel Silicide Powder Related Information:
Nickel Silicide Powder: The reaction between SiC with chemically plated nickel on its surface has been investigated. X-ray analysis gave a good number of lattice parameters for Ni 3Si, a = 0.3522nm, and has good agreement with the index. The surface layer of Ni diffuses into the SiC and exothermically forms Ni 3Si in a defined temperature range, producing free carbon which could be deleterious to the properties.
A reaction is evident at temperatures 900°C and 1350°C with an increasing trend. The mechanism of sintering which is shown to be a reaction sintered transient-liquid phase method was determined by thermal analysis and metallographic techniques. The strength, hardness, and density properties of sintered Ni /Al (Liquid) + SiC composites are also reported.
Storage Conditions: Airtight sealed, avoid light and keep dry at room temperature. Please email us for the customization. Email: contact@nanochemazone.com Note: We supply different size ranges of nano and micron size powder as per the client’s requirements and also accept customization in various parameters.
Perlite Nanoclay Powder
Perlite Nanoclay Powder
Product Name: Perlite Nanoclay Powder (Purity: > 99.9%, APS: 80-100 nm)
Product |
Perlite Nanoclay Powder |
| Cat No | NCZ-MN-142/20 |
| CAS No | 1332-58-7 |
| Purity | 99.9% |
| APS | 80-100 nm |
| Color | Gray/ off white |
| Specific Gravity | 2.2-2.4 |
| Melting Point | >2000 °F |
| pH | Neutral |
| MOHS Hardness | 5.5 |
| Water Absorption | 200-600 % by weight |
| Oil Adsorption | 50-100 grms |
| Softening Point | 1800 F or 980 |
| G.E. Brightness % | 70-80% |
| Apparent Density | 2.5-10.5 lb/ft3 |
| Wet Density | 5-20 lb/ft3 |
| Refractive Index | 1.47 |
Perlite Nanoclay Related Information
Storage Conditions: Airtight sealed, avoid light and keep dry at room temperature. Please contact us for customization and price inquiry Email: contact@nanochemazone.com Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in various parameters.
Single Crystal Silicon Dioxide Wafer P-Type
Single Crystal Silicon Dioxide Wafer P-Type
Product Name: Single Crystal Silicon Dioxide Wafer P-Type
| Product Name | Single Crystal Silicon Dioxide Wafer P-Type |
| Cat. No. | NCZ-NSC 319/20 |
| Diameter | 100 mm +-0.2 mm (4″) |
| Oxide Thickness | 300 ±20 nm (dry) |
| Color | Violet |
| Thickness | 500 ± 20 micron |
| Resistivity | 1-10 ohm-cm |
| Type/Dopant | P |
| Orientation | <100> |
Single Crystal Silicon Dioxide Wafer P-Type (4 inches) Description
Single Crystal Silicon Dioxide Wafer P-Type NanoChemazone produces Silicon Oxide Wafer with the highest possible density. Our standard wafer size is nominally 25.4 mm (1 inch) to 300 mm (11.8 inches). Materials are produced using crystallization, solid-state, and other ultra-high purification processes such as sublimation.
This process forms a cylindrical ingot which is then sliced and polished to form wafers. NanoChemazone High Purity (99.999%) Silicon Oxide Wafers- Polished & Unpolished specializes in producing custom compositions for commercial and research applications and new proprietary technologies.
NanoChemazone also casts any of the rare earth metals and most other advanced materials into rod, bar or plate form, as well as other machined shapes and through other processes such as nanoparticles and in the form of solutions and organometallics. We also produce Silicon as rod, pellets, powder, pieces, disc, ingot, wire, and in compound forms, such as oxide. Other shapes are available by request.
Single Crystal Silicon Dioxide Wafer P-Type (4 inches) RELATED INFORMATION
Storage Conditions: Airtight sealed, avoid light, and keep dry at room temperature. Please email us for the customization. Email: contact@nanochemazone.com Note: We supply different size ranges of nano and micron size powder as per the client’s requirements and also accept customization in various parameters.
Single Crystal Silicon Wafer Diameter Intrinsic (4-inch)
Single Crystal Silicon Wafer Diameter Intrinsic (4-inch)
Product Name: Single Crystal Silicon Wafer Diameter Intrinsic (4-inch)
| Product Name | Single Crystal Silicon Wafer |
| Cat No. | NCZ-NSC327/20 |
| Diameter | 4 inches |
| Doping | undoped |
| Thickness | 400~415+/-10um |
| Resistivity | 4000 5000 ohms.cm Undoped |
| Orientation | <100>+/-0.5 |
| Polishing | one side polished |
| Application | Research Material |
| Thickness | 525 Micron |
| Resistivity | 1-10 ohm-cm |
| Polished | Single side polished |
Single Crystal Silicon Wafer thickness Is determined by the mechanical strength of the material used the wafer must be thick enough to support its own weight without cracking during handling. Wafers are grown from crystal having a regular crystal structure, with silicon having a diamond cubic structure. Orientation is defined by the Miller index with (100) or (111) faces being the most common for silicon. Ion implantation depends on the wafer’s crystal orientation since each direction offers distinct paths the transport.
Note: SSP = Single Side Polished, DSP = Double Side Polished, E = Etched, C = AsCut, Material - CZ unless noted, L = Lapped, Und = Undoped (Intrinsic)
Single Crystal Silicon Wafer N-Type (3-inch)
Single Crystal Silicon Wafer N-Type (3-inch)
Product Name: Single Crystal Silicon Wafer N-Type (3-inch)
| Product Name | Single Crystal Silicon Wafer N-Type (3-inch) |
| Cat No. | NCZ-NSC333/20 |
| Type | N |
| Dia | 3 Inch |
| Doping | N-type |
| Resistivity | (1-10 Ohm/sq). |
| Thickness | 290 + 10 µm |
| Orientation | 100 |
| Polished | Single side polished |
| Form | crystalline (cubic (a = 5.4037) |
| Polished | wafer (single side polished) |
| does not contain | dopant |
| DÃa | 2 inch |
| Thickness | 0.5 mm |
| Boling Point | 2355 °C (lit.) |
| Melting Point | 1410 °C (lit.) |
| Density | 2.33 g/mL at 25 °C (lit.) |
| Semiconductor properties | <100>, N-type |
| SMILES string | [Si] |
Single Crystal Silicon Wafer N-Type (3-inch), NanoChemazone Supplies provides both standard and customized high-quality single crystals, wafers and substrates for a wide range of applications such as LED, ferroelectric, piezoelectric, electro-optical, photonics, high power electronics, and high-frequency power devices, just to name a few. Customized crystal growth, precision machining, and coating services are available. Please contact us today to discuss your project requirements.
Please email us for the customization. Email: contact@nanochemazone.com Please contact us for customization and price inquiry Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in the various parameters.
Single Crystal Silicon Wafer P Type 2 Inch
Single Crystal Silicon Wafer P Type 2 Inch
Product Name: Single Crystal Silicon Wafer P Type 2 Inch| Product Name | Single Crystal Silicon Wafer P Type 2 Inch |
| Cat No. | NZC-NSC331/20 |
| Diameter | 2 inch |
| Doping | P-type |
| Resistivity | (1-50 Ohm/sq.) |
| Thickness | 280 + 25 µm |
| Orientation | 100 |
| Polished | Single side polished |
Single crystal silicon wafer P-Type (2 inches) Description:
NanoChemazone Supplies provides both standard and customized high-quality single crystals, wafers and substrates for a wide range of applications such as LED, ferroelectric, piezoelectric, electro-optical, photonics, high power electronics, and high-frequency power devices, just to name a few. Customized crystal growth, precision machining, and coating services are available. Please contact us today to discuss your project requirements.
Single crystal silicon wafer P-Type (2 inches) Related Information
Storage Conditions: Airtight sealed, avoid light, and keep dry at room temperature. Please contact us for customization and price inquiry Email: contact@nanochemazone.com Note: We supply different size ranges of Nano and micron as per the client’s requirements and Note: For pricing & ordering information, please contact us at sales@nanochemazone.com Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com Customization: If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request
Single Crystal Silicon-Silicon dioxide Wafer
Single Crystal silicon-silicon dioxide Wafer Â
Product Name: Single Crystal silicon-silicon dioxide Wafer Â
| Product Name | Single Crystal silicon-silicon dioxide Wafer P-type (4 inches) |
| Cat No. | NCZ-NSC318/20 |
| DÃa                     | 100 mm (4 inches) |
| Orientation | <100> |
| Wafer thickness | 500 micrometer |
| Resistivity | <0.01 |
| Polished         | Front Side Polished |
| Â Thickness | 300 nm (dry) |
| Purity | 99.9% |
| Formula | Si/SiO2 |
Single Crystal silicon-silicon dioxide Wafer P-type Description :
Provided in a single wafer caseSilicon oxide wafer SIO2 thin-film among semiconductor technology, SiO2 thin film layers are mainly used as dielectric material and more recently, they are integrated with MEMS (Micro Electro Mechanical Systems) devices. The simplest way to produce silicon oxide layers on silicon wafers is to oxidize silicon with oxygen.
Single Crystal silicon-silicon dioxide Wafer RELATED INFORMATION Storage Conditions: Airtight sealed, avoid light and keep dry at room temperature. Please email us for the customization. Email: contact@nanochemazone.com Note: We supply different size ranges of nano and micron size powder as per the client’s requirements and also accept customization in various parameters.
Reviews
There are no reviews yet.