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CVD Graphene on SiO2 Substrate
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Product Name |
CVD Graphene on SiO2 Substrate/Wafer |
Stock No. | NCZ-GSW-0018 |
Purity | > 99.9% |
Graphene Film | |
FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
PRODUCT DETAIL
CAS No.: 7782-42-5 (graphene), 7631-86-9 (silicon dioxide), 7440-21-3 (silicon)
Sheet Resistance | <600Ω/sq |
Custom Order | <300Ω/sq |
Transparency | >95% |
GRAPHENE ON SILICON DIOXIDE (300NM)/SI SUBSTRATE (P-TYPE, 1-10 Ω·CM)Â
CVD Graphene | Substrate |
1cm x 1cm | 1.5cm x 1.5cm, thickness: 300nm SiO2/700um Si |
1inch x 1inch | 3.0cm x 3.0cm, thickness:Â 300nm SiO2/700um Si |
3cm x 3cm | 3.5cm x 3.5cm, thickness:Â 300nm SiO2/700um Si |
7cm x 7cm | Diameter: 4inch, thickness:Â 300nm SiO2/600um Si |
Categories: CVD Graphene, Graphene Nanostructures
Description
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
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3D Freestanding Graphene Foam
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Product Name |
3D Freestanding Graphene Foam |
Stock No. | NCZ-GSW-0023 |
Purity | > 99.9% |
Graphene Film | |
FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
Sheet Resistance | <600Ω/sq |
Custom Order | <300Ω/sq |
Transparency | >95% |
CVD Graphene on Copper Foil
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CAS No.: 7782-42-5 (graphene), 7440-50-8 (copper)
PREPARATION METHOD:Â CVD Method
WAFER STRUCTURE: Graphene on Copper Foil (both sides), Copper Foil 45 µm
CHARACTERIZATION & ANALYSIS
Predominantly Single-layer Graphene on Copper Substrate
Sheet Resistance | <600Ω/sq |
Custom Order | <300Ω/sq |
Transparency | >95% |
Product Name |
CVD Graphene on Copper Foil |
Stock No. | NCZ-GSW-0016 |
Purity | > 99.9% |
Graphene Film | |
FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
CVD Graphene on PET Substrate
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Product Name |
CVD Graphene on PET Substrate |
Stock No. | NCZ-GSW-0019 |
Purity | > 99.9% |
Graphene Film | |
FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
Sheet Resistance | <600Ω/sq |
Custom Order | <300Ω/sq |
Transparency | >95% |
Graphene Nanoplatelets & Carbon Nanotubes Mix Paste
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MF: | C |
Chemical Name: |
Graphene and CNT Paste |
Purity: |  ≥99.5% |
Diameter | GNP 5-7 μm, CNT Outside Diameter: 50-80 nm, Inside Diameter: 5-15 nm (Customization possible) |
Length | 10-20 μm (Customization possible) |
Number of Layers: | <30 (Customization possible) |
Color | Black |
Form: | Dispersion/Paste/Solution |
Product Number: | #NCZC1011 |
CAS Number | 7782-42-5 |
Solvent | NMP, DMF, DMSO, Acetonitrile, etc. |
Graphene Nanoplatelets Dispersion
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M | C |
Chemical Name |
Graphene Nanoplatelets Paste and Dispersion |
Purity | ≥99.5% |
Diameter | 1-10 µm (Customization possible) |
Thickness | 2-20 nm (Customization possible) |
Number of Layers | <30 (Customization possible) |
Color | Black |
Form | Dispersion/Paste/Solution |
Product Number | NCZC1009 |
CAS Number | 7782-42-5 |
Graphene on Lacey Carbon 300 Mesh Copper TEM Grids
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Graphene On Lacey Carbon 300 Mesh Copper TEM Grids
Product Name | Graphene On Lacey Carbon 300 Mesh Copper TEM Grids |
Stock No. | NCZ-GSW-0015 |
Purity | > 99.9% |
Graphene Film | |
FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
Sheet Resistance |  450±40 Ω/sq (1cm x1cm) |
- Four thicknesses of CVD graphene:Â Available in either 1, 2, 3-5 or 6-8 layers
- TEM Substrate:Â Lacey carbon support film on 300 mesh copper TEM grid
- Graphene coverage of the TEM grid is better than 75%
Type | Thickness of the Graphene | Transparency | TEM Grid/AFM Substrate | Support Film |
1 Layer | Â ~0.35 nm | Â ~96.4% | 300 Mesh Copper Grid | N/A |
2 Layers | Â ~0.7 nm | Â ~92.7% | 300 Mesh Copper Grid | N/A |
3-5 Layers | Â 1.0-1.7 nm | Â ~85.8-90.4% | 300 Mesh Copper Grid | N/A |
6-8 Layers | Â 2.1-2.8 nm | Â ~78.5-83.2% | 300 Mesh Copper Grid | N/A |
Graphene on Silicon Nitride TEM Grids
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Graphene on Silicon Nitride TEM GridsÂ
Product Name | Graphene on Silicon Nitride TEM Grids |
Stock No. | NCZ-GSW-0012 |
Purity | > 99.9% |
Graphene Film | |
FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
Sheet Resistance |  450±40 Ω/sq (1cm x1cm) |
- Four thicknesses of CVD graphene:Â Available in either 1, 2, 3-5 or 6-8 layers
- TEM Substrate:  200 µm thick 3.0mm hexagonal silicon substrate with a 0.5x0.5mm aperture and 200nm thick silicon nitride membrane with approximately 6,400 2.5µm holes
- Graphene coverage of the TEM grid is > 75%
Type | Thickness of the Graphene | Transparency | TEM Grid/AFM Substrate | Support Film |
1 Layer |  ~ 0.35 nm |  ~ 96.4% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
2 Layers |  ~0.7 nm |  ~92.7% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
3-5 Layers |  1.0-1.7 nm |  ~85.8-90.4% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
6-8 Layers |  2.1-2.8 nm |  ~78.5-83.2% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
Hydroxylated Graphene Quantum Dots
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Hydroxylated Graphene Quantum Dots
CAS Number          | 7440-40-0 |
Product Number | NCZC3002 |
Concentration | 1mg/mL to 20 mg/mL (in stock), Concentration Customization is Possible |
Carrier | Water, Ethanol, IPA, NMP, Toluene, Methanol, Dispersion Customization is Possible |
APS | 5-10 nm (Customization is Possible) |
Package Size | 1-100 mL (Customization is Possible) |
Composition: | Hydroxylated Graphene Quantum Dots |
Appearance: | Colorless solution |
PL peak: | 480 nm (reference only, the actual value may vary) |
Particle Size: | <10 nm |
Concentration: | 1 mg/ml (available up to 20mg/ml) |
Solution: | Water, a mixture of water and ethylene glycol (customization possible) |
Purity: | > 99.9% |