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CVD Graphene on SiO2 Substrate
₹0.00
Product Name |
CVD Graphene on SiO2 Substrate/Wafer |
Stock No. | NCZ-GSW-0018 |
Purity | > 99.9% |
Graphene Film | |
FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
PRODUCT DETAIL
CAS No.: 7782-42-5 (graphene), 7631-86-9 (silicon dioxide), 7440-21-3 (silicon)
Sheet Resistance | <600Ω/sq |
Custom Order | <300Ω/sq |
Transparency | >95% |
GRAPHENE ON SILICON DIOXIDE (300NM)/SI SUBSTRATE (P-TYPE, 1-10 Ω·CM)Â
CVD Graphene | Substrate |
1cm x 1cm | 1.5cm x 1.5cm, thickness: 300nm SiO2/700um Si |
1inch x 1inch | 3.0cm x 3.0cm, thickness:Â 300nm SiO2/700um Si |
3cm x 3cm | 3.5cm x 3.5cm, thickness:Â 300nm SiO2/700um Si |
7cm x 7cm | Diameter: 4inch, thickness:Â 300nm SiO2/600um Si |
Categories: CVD Graphene, Graphene Nanostructures
Description
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
Shipping & Delivery
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FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
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Purity | > 99.9% |
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FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
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CVD Graphene on Quartz Substrate
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CVD Graphene on  Quartz Substrate |
Stock No. | NCZ-GSW-0020 |
Purity | > 99.9% |
Graphene Film | |
FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
Sheet Resistance | <600Ω/sq |
Custom Order | <300Ω/sq |
Transparency | >95% |
CVD Graphene | Substrate |
1cm x 1cm | Diameter: 1inch, Thickness: 3mm* |
1inch x 1inch | 30mm x 30mm, Thickness:Â 1mm |
Graphene Nanoplatelets & Carbon Nanotubes Mix Paste
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MF: | C |
Chemical Name: |
Graphene and CNT Paste |
Purity: |  ≥99.5% |
Diameter | GNP 5-7 μm, CNT Outside Diameter: 50-80 nm, Inside Diameter: 5-15 nm (Customization possible) |
Length | 10-20 μm (Customization possible) |
Number of Layers: | <30 (Customization possible) |
Color | Black |
Form: | Dispersion/Paste/Solution |
Product Number: | #NCZC1011 |
CAS Number | 7782-42-5 |
Solvent | NMP, DMF, DMSO, Acetonitrile, etc. |
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M | C |
Chemical Name |
Graphene Nanoplatelets Paste and Dispersion |
Purity | ≥99.5% |
Diameter | 1-10 µm (Customization possible) |
Thickness | 2-20 nm (Customization possible) |
Number of Layers | <30 (Customization possible) |
Color | Black |
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CAS Number | 7782-42-5 |
Graphene Nanoplatelets Powder
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Graphene Nanoplatelets Powder (> 99.5 wt%, D 5-10 um, < 20 layers)
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Graphene Nanoplatelets Powder
MF | C |
Chemical Name |
Graphene Nanoplatelets |
Purity | ≥99.5% |
Diameter | 5-10 µm |
Thickness | 4-20 nm |
Number of Layers | <30 (Customization possible) |
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CAS Number | 7782-42-5 |
Graphene on SiO2 Substrate
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Graphene on Ultra-Flat Thermal SiO2Â Substrate
Product Name | Graphene on Ultra-Flat Thermal SiO2 Substrate |
Stock No. | NCZ-GSW-0011 |
Purity | > 99.9% |
Graphene Film | |
FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
Sheet Resistance |  450±40 Ω/sq (1cm x1cm) |
- Four thicknesses of CVD graphene:Â Available in either 1, 2, 3-5 or 6-8 layers
- The Ultra-flat Thermal SiO2 Substrate consists of a 200 nm thermally grown SiO2 film on an ultra-flat silicon wafer with a normal thickness of 675 µm. The size is 5mm x 5mm.
- Graphene coverage of the TEM grid is 75-95 %
Type | Thickness of the Graphene | Transparency | Support Film |
1 Layer | ~0.35nm | ~96.4% | Ultra-flat Silicon |
2 Layers | ~0.7nm | ~92.7% | Ultra-flat Silicon |
3-5 Layers | 1.0-1.7nm | ~85.8-90.4% | Ultra-flat Silicon |
6-8 Layers | 2.1-2.8nm | ~78.5-83.2% | Ultra-flat Silicon |
Graphene on Ultra-Fine 200 Mesh Copper TEM Grids
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Graphene coated TEM Grids
Product Name | Graphene On Ultra-Fine 200 Mesh Copper TEM Grids |
Stock No. | NCZ-GSW-0014 |
Purity | > 99.9% |
Graphene Film | |
FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
Sheet Resistance |  450±40 Ω/sq (1cm x1cm) |
- Four thicknesses of CVD graphene:Â Available in either 1, 2, 3-5 or 6-8 layers
- TEM Substrate:Â Microporous Copper TEM Grids with Beryllium-Copper Support Aperture
- Graphene coverage of the TEM grid is better than 75%
Type | Thickness of the Graphene | Transparency | TEM Grid/AFM Substrate | Support Film |
1 Layer | Â ~0.35 nm | Â ~96.4% | 200 Mesh Copper Grid | N/A |
2 Layers | Â ~0.7 nm | Â ~92.7% | 200 Mesh Copper Grid | N/A |
3-5 Layers | Â 1.0-1.7 nm | Â ~85.8-90.4% | 200 Mesh Copper Grid | N/A |
6-8 Layers | Â 2.1-2.8 nm | Â ~78.5-83.2% | 200 Mesh Copper Grid | N/A |