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CVD Graphene on SiO2 Substrate
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| Product Name |
CVD Graphene on SiO2 Substrate/Wafer |
| Stock No. | NCZ-GSW-0018 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
PRODUCT DETAIL
CAS No.: 7782-42-5 (graphene), 7631-86-9 (silicon dioxide), 7440-21-3 (silicon)
| Sheet Resistance | <600Ω/sq |
| Custom Order | <300Ω/sq |
| Transparency | >95% |
GRAPHENE ON SILICON DIOXIDE (300NM)/SI SUBSTRATE (P-TYPE, 1-10 Ω·CM)Â
| CVD Graphene | Substrate |
| 1cm x 1cm | 1.5cm x 1.5cm, thickness: 300nm SiO2/700um Si |
| 1inch x 1inch | 3.0cm x 3.0cm, thickness:Â 300nm SiO2/700um Si |
| 3cm x 3cm | 3.5cm x 3.5cm, thickness:Â 300nm SiO2/700um Si |
| 7cm x 7cm | Diameter: 4inch, thickness:Â 300nm SiO2/600um Si |
Categories: CVD Graphene, Graphene Nanostructures
Description
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
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| Purity | > 99.9% |
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| 2 Layers |  ~0.7 nm |  ~92.7% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
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Graphene on SiO2 Substrate
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| Stock No. | NCZ-GSW-0011 |
| Purity | > 99.9% |
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| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
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| Product Number | NCZC3002 |
| Concentration | 1mg/mL to 20 mg/mL (in stock), Concentration Customization is Possible |
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| APS | 5-10 nm (Customization is Possible) |
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| Appearance: | Colorless solution |
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