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CVD Graphene on SiO2 Substrate
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Product Name |
CVD Graphene on SiO2 Substrate/Wafer |
Stock No. | NCZ-GSW-0018 |
Purity | > 99.9% |
Graphene Film | |
FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
PRODUCT DETAIL
CAS No.: 7782-42-5 (graphene), 7631-86-9 (silicon dioxide), 7440-21-3 (silicon)
Sheet Resistance | <600Ω/sq |
Custom Order | <300Ω/sq |
Transparency | >95% |
GRAPHENE ON SILICON DIOXIDE (300NM)/SI SUBSTRATE (P-TYPE, 1-10 Ω·CM)Â
CVD Graphene | Substrate |
1cm x 1cm | 1.5cm x 1.5cm, thickness: 300nm SiO2/700um Si |
1inch x 1inch | 3.0cm x 3.0cm, thickness:Â 300nm SiO2/700um Si |
3cm x 3cm | 3.5cm x 3.5cm, thickness:Â 300nm SiO2/700um Si |
7cm x 7cm | Diameter: 4inch, thickness:Â 300nm SiO2/600um Si |
Categories: CVD Graphene, Graphene Nanostructures
Description
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
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Number of Layers: | <30 (Customization possible) |
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Purity | ≥99.5% |
Diameter | 5-10 µm |
Thickness | 4-20 nm |
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Purity | > 99.9% |
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FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
Hall Electron Mobility on SiO2/Si | Â 4000 cm2/Vs |
Sheet Resistance |  450±40 Ω/sq (1cm x1cm) |
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1 Layer | Â ~0.35 nm | Â ~96.4% | 300 Mesh Copper Grid | N/A |
2 Layers | Â ~0.7 nm | Â ~92.7% | 300 Mesh Copper Grid | N/A |
3-5 Layers | Â 1.0-1.7 nm | Â ~85.8-90.4% | 300 Mesh Copper Grid | N/A |
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Product Name | Graphene on Ultra-Flat Thermal SiO2 Substrate |
Stock No. | NCZ-GSW-0011 |
Purity | > 99.9% |
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FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
Sheet Resistance |  450±40 Ω/sq (1cm x1cm) |
- Four thicknesses of CVD graphene:Â Available in either 1, 2, 3-5 or 6-8 layers
- The Ultra-flat Thermal SiO2 Substrate consists of a 200 nm thermally grown SiO2 film on an ultra-flat silicon wafer with a normal thickness of 675 µm. The size is 5mm x 5mm.
- Graphene coverage of the TEM grid is 75-95 %
Type | Thickness of the Graphene | Transparency | Support Film |
1 Layer | ~0.35nm | ~96.4% | Ultra-flat Silicon |
2 Layers | ~0.7nm | ~92.7% | Ultra-flat Silicon |
3-5 Layers | 1.0-1.7nm | ~85.8-90.4% | Ultra-flat Silicon |
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Hydroxylated Graphene Quantum Dots
CAS Number          | 7440-40-0 |
Product Number | NCZC3002 |
Concentration | 1mg/mL to 20 mg/mL (in stock), Concentration Customization is Possible |
Carrier | Water, Ethanol, IPA, NMP, Toluene, Methanol, Dispersion Customization is Possible |
APS | 5-10 nm (Customization is Possible) |
Package Size | 1-100 mL (Customization is Possible) |
Composition: | Hydroxylated Graphene Quantum Dots |
Appearance: | Colorless solution |
PL peak: | 480 nm (reference only, the actual value may vary) |
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