Hexagonal Boron Nitride (H-BN) on Si/SiO2
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Hexagonal Boron Nitride (H-BN) on Si/SiO2
| Product Name |
Monolayer h-BN |
| Transparency | > 97% |
| hBN Coverage | 100% with sporadic adlayers |
| Raman Peak | 1370 /cm-1 |
| Bandgap | 5.97 eV |
| Grain size | >4 μm |
Si/SiO2 Substrate |
|
| Type/Doing | P/B |
| Wafer Thickness | 500 +/- 50 μm |
| Oxide Thickness | 300 nm |
| Resistivity | 1-10 (Ω -cm) |
| Orientation | <1-0-0> |
| Growth Method | CZ |
| Metal Impurities | 1.00e10 – 5.00e10 (at/cm2) |
Description
Note: For pricing & ordering information, please contact us at:Â sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities etc.) are available upon request.
Shipping & Delivery
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