Single Crystal Silicon Wafer N-Type
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Single Crystal Silicon Wafer N-Type (1 inch)
Product Name: Single Crystal Silicon Wafer N-Type (1 inch)
| Product Name | Single Crystal Silicon Wafer N-Type (1 inch) |
| Cat No. | NCZ-NSC330/20 |
| Size | 1 inch |
| Thickness | 300-380 micro-meter |
| Type | N-type |
| Dopant | Phosphorus |
| Resistivity | 1-10 ohm/cm |
| Surface | Single side polished |
| Boling Point | 2355 °C (lit.) |
| Melting Point | 1240 °C,1410 °C (lit.) |
| Density | 2.33 g/mL at 25 °C (lit.) |
| Semiconductor Properties | <100>, N-type |
| SMILES string | [Si] |
Physical properties:
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 100 – 3000 Ωcm.
Oxygen content: ≤ 1~1.8 x 1018 /cm3; Carbon content: ≤ 5 x 1016 /cm3; Boule diameter: 1~8 ″
Description:
Single Crystal Silicon Wafer N-Type (1 inch). We have heated polished doped single-crystal silicon wafers in a single-mode microwave cavity to temperatures where surface to surface bonding occurred. The absorption of microwaves and heating of the wafers is attributed to the inclusion of n-type or p-type impurities into these substrates.
A cylindrical cavity TM (sub 010) standing wave mode was used to irradiate samples of various geometry at positions of high magnetic field. This process was conducted in a vacuum to exclude plasma effects.
This initial study suggests that the inclusion of impurities in single crystal silicon significantly improved its microwave absorption (loss factor) to a point where heating silicon wafers directly can be accomplished in minimal time. Bonding of these substrates, however, occurs only at points of intimate surface to surface contact. The inclusion of a thin metallic layer on the surfaces enhances the bonding process.
Please email us for the customization.
Email: contact@nanochemazone.com
Please contact us for customization and price inquiry
Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in the various parameters
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
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Related Information
Please email us for the customization.
Email: contact@nanochemazone.com
Please contact us for customization and price inquiry
Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in various parameters.
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Product Name: Single crystal silicon wafer N-type (2 inch)
| Product Name | Single crystal silicon wafer N-type (2 inch) |
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| SMILES string | [Si] |
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Product Name: Single Crystal Silicon Wafer N-type (4-inch)
| Product Name | Single Crystal Silicon Wafer N-type (4-inch) |
| Cat No. | NCZ-NSC331/20 |
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| Surface: | Single Side Polished |
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Single crystal silicon wafer P-Type (2 inches) Related Information
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Single Crystal silicon-silicon dioxide Wafer N-type (4 inch)
| Product Name | Single Crystal Silicon Wafer P-Type (4 Inch) |
| Cat No. | NZC-NSC333/20 |
| MF | Si/SiO2 |
| Día | 100mm ± 0.5mm (4 inch) |
| Type/Dopant | P |
| Orientation | <100> |
| Wafer thickness | 525±25um |
| Resistivity | 1-10 ohm-cm |
| Polished | Single side polished |
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Crystal silicon-silicon dioxide Wafer N-type (4 inches) Description
Single crystal silicon is the most widely used semiconductor material as a substrate material due to its excellent machinability, mechanical stability, and the potential to combine sensing elements and electronics on the same substrate. Circular wafers made of silicon are used as the substrate in most MEMS sensors. The crystal orientation should be known before manufacturing since silicon has orientation-dependent properties such as piezoresistivity coefficients and etching rates. The common orientation is (100) where the numbers represent Miller indices. As an example, (100) wafer that has a primary flat side as an indication of < 110 > direction. When a piezoresistive element is placed on a (100) wafer, the orientation should be parallel to < 110 > direction if the piezoresistivity coefficients in that direction are intended to be utilized.
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com Customization: If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.Crystal Silicon dioxide Wafer N-type (4 inches) RELATED INFORMATION
Storage Conditions: Airtight sealed, avoid light, and keep dry at room temperature. Please contact us for customization and price inquiry Email: contact@nanochemazone.com Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in various parameters.
Single Crystal Silicon Wafer P-type,
Single Crystal Silicon Wafer P-type,
| Product Name | Single Crystal Silicon Wafer P-type |
| Cat No. | NCZ-NSC332/20 |
| Día | 3 inch |
| Diameter | 76.2mm ± 0.3mm (3 inches) |
| Type | P |
| Orientation | <100> |
| Thickness | 400±10um |
| Resistivity | 1-10 ohm-cm |
| Polished | Single side polished |
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