Single Crystal Silicon Wafer Intrinsic (2 Inch)
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Single Crystal Silicon Wafer Intrinsic (2 Inch)
Product Name: Single Crystal Silicon Wafer Intrinsic (2 Inch)
| Product Name | Single Crystal Silicon Wafer Intrinsic (2 Inch) |
| Cat No. | NCZ-NSC328/20 |
| Size | 50.8+/- 0.2mm, |
| Thickness | 430+/-10um |
| Undoped | Intrinsic |
| Resistivity | 2000~4000Ω.cm |
| Orientation | <100>+/-0.5° |
| Polishing | One Side Polished |
Provided in a single wafer case
Description:
Single Crystal Silicon Wafer Intrinsic is the most widely used semiconductor material as a substrate material due to its excellent machinability, mechanical stability, and the potential to combine sensing elements and electronics on the same substrate.
Circular wafers made of silicon are used as a substrate in most MEMS sensors. The crystal orientation should be known before manufacturing since silicon has orientation-dependent properties such as piezoresistivity coefficients and etching rates. The common orientation is (100) where the numbers represent Miller indices.
As an example, (100) wafer that has a primary flat side as an indication of < 110 > direction. When a piezoresistive element is placed on a (100) wafer, the orientation should be parallel to < 110 > direction if the piezoresistivity coefficients in that direction are intended to be utilized.
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
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Single Crystal Silicon Dioxide Wafer P-Type
Product Name: Single Crystal Silicon Dioxide Wafer P-Type
| Product Name | Single Crystal Silicon Dioxide Wafer P-Type |
| Cat. No. | NCZ-NSC 319/20 |
| Diameter | 100 mm +-0.2 mm (4″) |
| Oxide Thickness | 300 ±20 nm (dry) |
| Color | Violet |
| Thickness | 500 ± 20 micron |
| Resistivity | 1-10 ohm-cm |
| Type/Dopant | P |
| Orientation | <100> |
Single Crystal Silicon Dioxide Wafer P-Type (4 inches) Description
Single Crystal Silicon Dioxide Wafer P-Type NanoChemazone produces Silicon Oxide Wafer with the highest possible density. Our standard wafer size is nominally 25.4 mm (1 inch) to 300 mm (11.8 inches). Materials are produced using crystallization, solid-state, and other ultra-high purification processes such as sublimation.
This process forms a cylindrical ingot which is then sliced and polished to form wafers. NanoChemazone High Purity (99.999%) Silicon Oxide Wafers- Polished & Unpolished specializes in producing custom compositions for commercial and research applications and new proprietary technologies.
NanoChemazone also casts any of the rare earth metals and most other advanced materials into rod, bar or plate form, as well as other machined shapes and through other processes such as nanoparticles and in the form of solutions and organometallics. We also produce Silicon as rod, pellets, powder, pieces, disc, ingot, wire, and in compound forms, such as oxide. Other shapes are available by request.
Single Crystal Silicon Dioxide Wafer P-Type (4 inches) RELATED INFORMATION
Storage Conditions: Airtight sealed, avoid light, and keep dry at room temperature. Please email us for the customization. Email: contact@nanochemazone.com Note: We supply different size ranges of nano and micron size powder as per the client’s requirements and also accept customization in various parameters.
Single crystal silicon wafer Intrinsic (2-inch)
Single crystal silicon wafer Intrinsic (2-inch)
Product Name: Single crystal silicon wafer Intrinsic (2-inch)
| Product Name | Single crystal silicon wafer Intrinsic (2-inch) |
| Cat No. | NCZ-NSC329/20 |
| Diameter | 2 inch |
| Doping | Intrinsic |
| Resistivity | (>1000ohm/sq.) |
| Thickness | 400µm |
| Orientation | 100 |
| Polished | Single side polished |
Single crystal silicon wafer Intrinsic (2-inch) is the most widely used semiconductor material as a substrate material due to its excellent machinability, mechanical stability, and the potential to combine sensing elements and electronics on the same substrate. Circular wafers made of silicon are used as a substrate in most MEMS sensors.
The crystal orientation should be known before manufacturing since silicon has orientation-dependent properties such as piezoresistivity coefficients and etching rates. The common orientation is (100) where the numbers represent Miller indices.
As an example, (100) wafer that has a primary flat side as an indication of < 110 > direction. When a piezoresistive element is placed on a (100) wafer, the orientation should be parallel to < 110 > direction if the piezoresistivity coefficients in that direction are intended to be utilized.
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Single Crystal Silicon Wafer N-Type (3-inch)
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Product Name: Single Crystal Silicon Wafer N-Type (3-inch)
| Product Name | Single Crystal Silicon Wafer N-Type (3-inch) |
| Cat No. | NCZ-NSC333/20 |
| Type | N |
| Dia | 3 Inch |
| Doping | N-type |
| Resistivity | (1-10 Ohm/sq). |
| Thickness | 290 + 10 µm |
| Orientation | 100 |
| Polished | Single side polished |
| Form | crystalline (cubic (a = 5.4037) |
| Polished | wafer (single side polished) |
| does not contain | dopant |
| Día | 2 inch |
| Thickness | 0.5 mm |
| Boling Point | 2355 °C (lit.) |
| Melting Point | 1410 °C (lit.) |
| Density | 2.33 g/mL at 25 °C (lit.) |
| Semiconductor properties | <100>, N-type |
| SMILES string | [Si] |
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Product Name: Single Crystal Silicon Wafer N-type (4-inch)
| Product Name | Single Crystal Silicon Wafer N-type (4-inch) |
| Cat No. | NCZ-NSC331/20 |
| Día | 4 inches |
| Type | N |
| Diameter (mm) | 4” (100.8mm) |
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| Doping | Phosphorous |
| Crystal Orientation | <100> |
| Surface: | Single Side Polished |
| Thickness | 250-500μm |
| Resistivity | 1-10ohm-cm |
| Crystal method | CZ |
| RRG (%) | ≤12 |
| Oxygen Contents (ppm) | 12.5-16.5 |
| Carbon Contents (ppm) | ≤1 |
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Product Name: Single Crystal Silicon Wafer P Type 2 Inch| Product Name | Single Crystal Silicon Wafer P Type 2 Inch |
| Cat No. | NZC-NSC331/20 |
| Diameter | 2 inch |
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Storage Conditions: Airtight sealed, avoid light, and keep dry at room temperature. Please contact us for customization and price inquiry Email: contact@nanochemazone.com Note: We supply different size ranges of Nano and micron as per the client’s requirements and Note: For pricing & ordering information, please contact us at sales@nanochemazone.com Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com Customization: If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request
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Single Crystal silicon-silicon dioxide Wafer N-type (4 inch)
| Product Name | Single Crystal Silicon Wafer P-Type (4 Inch) |
| Cat No. | NZC-NSC333/20 |
| MF | Si/SiO2 |
| Día | 100mm ± 0.5mm (4 inch) |
| Type/Dopant | P |
| Orientation | <100> |
| Wafer thickness | 525±25um |
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Single crystal silicon is the most widely used semiconductor material as a substrate material due to its excellent machinability, mechanical stability, and the potential to combine sensing elements and electronics on the same substrate. Circular wafers made of silicon are used as the substrate in most MEMS sensors. The crystal orientation should be known before manufacturing since silicon has orientation-dependent properties such as piezoresistivity coefficients and etching rates. The common orientation is (100) where the numbers represent Miller indices. As an example, (100) wafer that has a primary flat side as an indication of < 110 > direction. When a piezoresistive element is placed on a (100) wafer, the orientation should be parallel to < 110 > direction if the piezoresistivity coefficients in that direction are intended to be utilized.
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com Customization: If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.Crystal Silicon dioxide Wafer N-type (4 inches) RELATED INFORMATION
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Single Crystal Silicon Wafer P-type,
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| Cat No. | NCZ-NSC332/20 |
| Día | 3 inch |
| Diameter | 76.2mm ± 0.3mm (3 inches) |
| Type | P |
| Orientation | <100> |
| Thickness | 400±10um |
| Resistivity | 1-10 ohm-cm |
| Polished | Single side polished |
Description:
NanoChemazone Supplies provides both standard and customized high-quality single crystals, wafers and substrates for a wide range of applications such as LED, ferroelectric, piezoelectric, electro-optical, photonics, high power electronics, and high-frequency power devices, just to name a few. Customized crystal growth, precision machining, and coating services are available. Please contact us today to discuss your project requirements.Related Information
Please email us for the customization. Email: contact@nanochemazone.com Please contact us for customization and price inquiry Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in the various parameters. Note: For pricing & ordering information, please contact us at sales@nanochemazone.com Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com Customization: If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
Single Crystal Silicon-Silicon dioxide Wafer
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Product Name: Single Crystal silicon-silicon dioxide Wafer
| Product Name | Single Crystal silicon-silicon dioxide Wafer P-type (4 inches) |
| Cat No. | NCZ-NSC318/20 |
| Día | 100 mm (4 inches) |
| Orientation | <100> |
| Wafer thickness | 500 micrometer |
| Resistivity | <0.01 |
| Polished | Front Side Polished |
| Thickness | 300 nm (dry) |
| Purity | 99.9% |
| Formula | Si/SiO2 |
Single Crystal silicon-silicon dioxide Wafer P-type Description :
Provided in a single wafer caseSilicon oxide wafer SIO2 thin-film among semiconductor technology, SiO2 thin film layers are mainly used as dielectric material and more recently, they are integrated with MEMS (Micro Electro Mechanical Systems) devices. The simplest way to produce silicon oxide layers on silicon wafers is to oxidize silicon with oxygen.
Single Crystal silicon-silicon dioxide Wafer RELATED INFORMATION Storage Conditions: Airtight sealed, avoid light and keep dry at room temperature. Please email us for the customization. Email: contact@nanochemazone.com Note: We supply different size ranges of nano and micron size powder as per the client’s requirements and also accept customization in various parameters.
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