Single Crystal Silicon Wafer N-Type
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Single Crystal Silicon Wafer N-Type (1 inch)
Product Name: Single Crystal Silicon Wafer N-Type (1 inch)
| Product Name | Single Crystal Silicon Wafer N-Type (1 inch) |
| Cat No. | NCZ-NSC330/20 |
| Size | 1 inch |
| Thickness | 300-380 micro-meter |
| Type | N-type |
| Dopant | Phosphorus |
| Resistivity | 1-10 ohm/cm |
| Surface | Single side polished |
| Boling Point | 2355 °C (lit.) |
| Melting Point | 1240 °C,1410 °C (lit.) |
| Density | 2.33 g/mL at 25 °C (lit.) |
| Semiconductor Properties | <100>, N-type |
| SMILES string | [Si] |
Physical properties:
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 100 – 3000 Ωcm.
Oxygen content: ≤ 1~1.8 x 1018 /cm3; Carbon content: ≤ 5 x 1016 /cm3; Boule diameter: 1~8 ″
Description:
Single Crystal Silicon Wafer N-Type (1 inch). We have heated polished doped single-crystal silicon wafers in a single-mode microwave cavity to temperatures where surface to surface bonding occurred. The absorption of microwaves and heating of the wafers is attributed to the inclusion of n-type or p-type impurities into these substrates.
A cylindrical cavity TM (sub 010) standing wave mode was used to irradiate samples of various geometry at positions of high magnetic field. This process was conducted in a vacuum to exclude plasma effects.
This initial study suggests that the inclusion of impurities in single crystal silicon significantly improved its microwave absorption (loss factor) to a point where heating silicon wafers directly can be accomplished in minimal time. Bonding of these substrates, however, occurs only at points of intimate surface to surface contact. The inclusion of a thin metallic layer on the surfaces enhances the bonding process.
Please email us for the customization.
Email: contact@nanochemazone.com
Please contact us for customization and price inquiry
Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in the various parameters
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
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Iron is a Block D, Group 8, Period 4 element with an atomic weight of 55.845. The number of electrons in each of Iron's shells is 2, 8, 14, 2 and its electron configuration is [Ar] 3d6 4s2. The iron atom has a radius of 126 pm and a Van der Waals radius of 194 pm. Iron was discovered by humans before 5000 BC. In its elemental form, iron has a lustrous grayish metallic appearance. Iron is the fourth most common element in the Earth's crust and the most common element by mass forming the earth as a whole.
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Please email us for the customization.
Email: contact@nanochemazone.com
Please contact us for customization and price inquiry
Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in various parameters.
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Product Name: Single Crystal Silicon Wafer Intrinsic (2 Inch)
| Product Name | Single Crystal Silicon Wafer Intrinsic (2 Inch) |
| Cat No. | NCZ-NSC328/20 |
| Size | 50.8+/- 0.2mm, |
| Thickness | 430+/-10um |
| Undoped | Intrinsic |
| Resistivity | 2000~4000Ω.cm |
| Orientation | <100>+/-0.5° |
| Polishing | One Side Polished |
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Circular wafers made of silicon are used as a substrate in most MEMS sensors. The crystal orientation should be known before manufacturing since silicon has orientation-dependent properties such as piezoresistivity coefficients and etching rates. The common orientation is (100) where the numbers represent Miller indices.
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Product Name: Single crystal silicon wafer Intrinsic (2-inch)
| Product Name | Single crystal silicon wafer Intrinsic (2-inch) |
| Cat No. | NCZ-NSC329/20 |
| Diameter | 2 inch |
| Doping | Intrinsic |
| Resistivity | (>1000ohm/sq.) |
| Thickness | 400µm |
| Orientation | 100 |
| Polished | Single side polished |
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| Cat No. | NCZ-NSC332/20 |
| DÃa | 3 inch |
| Diameter | 76.2mm ± 0.3mm (3 inches) |
| Type | P |
| Orientation | <100> |
| Thickness | 400±10um |
| Resistivity | 1-10 ohm-cm |
| Polished | Single side polished |
Description:
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Single Crystal silicon-silicon dioxide Wafer Â
Product Name: Single Crystal silicon-silicon dioxide Wafer Â
| Product Name | Single Crystal silicon-silicon dioxide Wafer P-type (4 inches) |
| Cat No. | NCZ-NSC318/20 |
| DÃa                     | 100 mm (4 inches) |
| Orientation | <100> |
| Wafer thickness | 500 micrometer |
| Resistivity | <0.01 |
| Polished         | Front Side Polished |
| Â Thickness | 300 nm (dry) |
| Purity | 99.9% |
| Formula | Si/SiO2 |
Single Crystal silicon-silicon dioxide Wafer P-type Description :
Provided in a single wafer caseSilicon oxide wafer SIO2 thin-film among semiconductor technology, SiO2 thin film layers are mainly used as dielectric material and more recently, they are integrated with MEMS (Micro Electro Mechanical Systems) devices. The simplest way to produce silicon oxide layers on silicon wafers is to oxidize silicon with oxygen.
Single Crystal silicon-silicon dioxide Wafer RELATED INFORMATION Storage Conditions: Airtight sealed, avoid light and keep dry at room temperature. Please email us for the customization. Email: contact@nanochemazone.com Note: We supply different size ranges of nano and micron size powder as per the client’s requirements and also accept customization in various parameters.

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