Single Crystal Silicon-Silicon dioxide Wafer
₹0.00
Single Crystal silicon-silicon dioxide Wafer Â
Product Name: Single Crystal silicon-silicon dioxide Wafer Â
| Product Name | Single Crystal silicon-silicon dioxide Wafer P-type (4 inches) |
| Cat No. | NCZ-NSC318/20 |
| DÃa                     | 100 mm (4 inches) |
| Orientation | <100> |
| Wafer thickness | 500 micrometer |
| Resistivity | <0.01 |
| Polished         | Front Side Polished |
| Â Thickness | 300 nm (dry) |
| Purity | 99.9% |
| Formula | Si/SiO2 |
Single Crystal silicon-silicon dioxide Wafer P-type Description :
Provided in a single wafer case
Silicon oxide wafer SIO2 thin-film among semiconductor technology, SiO2 thin film layers are mainly used as dielectric material and more recently, they are integrated with MEMS (Micro Electro Mechanical Systems) devices. The simplest way to produce silicon oxide layers on silicon wafers is to oxidize silicon with oxygen.
Single Crystal silicon-silicon dioxide Wafer RELATED INFORMATION
Storage Conditions:
Airtight sealed, avoid light and keep dry at room temperature.
Please email us for the customization.
Email: contact@nanochemazone.com
Note: We supply different size ranges of nano and micron size powder as per the client’s requirements and also accept customization in various parameters.
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
You must be logged in to post a review.
Related products
Copper Vanadium Oxide
Copper Vanadium Oxide
| Product |
Copper Vanadium Oxide |
| Colour | N/A |
| Purity | 99% |
| Particle Size | 1-5µM (customizable) |
| Ingredient/MF | CuO6V2 |
| Product Code | NCZ-CP-397/20 |
| CAS Number | 14958-34-0 |
| Density | N/A |
| Melting point | N/A |
| Boiling Point | N/A |
| Molecular Weight      | 261.43 |
| Exact Mass     | 260.787004 |
 Copper Vanadium Oxide
Copper is a Block D, Group 11, Period 4 element with an atomic weight of 63.546. The number of electrons in each of copper's shells is 2, 8, 18, 1 and its electron configuration is [Ar] 3d10Â 4s1. The copper atom has a radius of 128 pm and a Van der Waals radius of 186 pm.
Copper was first discovered by Early Man prior to 9000 BC. In its elemental form, copper has a red-orange metallic luster appearance. Of all pure metals, only silver has a higher electrical conductivity.The origin of the word copper comes from the Latin word 'cuprium' which translates as "metal of Cyprus." Cyprus, a Mediterranean island, was known as an ancient source of mined copper.
Vanadium:
Vanadium is a Block D, Group 5, Period 4 element with an atomic weight of 50.9415. The number of electrons in each of Vanadium's shells is 2, 8, 11, 2 and its electron configuration is [Ar] 3d3 4s2. The vanadium atom has a radius of 134 pm and a Van der Waals radius of 179 pm.
Vanadium was discovered by Andres Manuel del Rio in 1801 and first isolated by Nils Gabriel Sefström in 1830. In its elemental form, vanadium has a bluish-silver appearance. It is a hard, ductile transition metal that is primarily used as a steel additive and in alloys such as Titanium-6AL-4V, which is composed of titanium, aluminum, and vanadium and is the most common titanium alloy commercially produced. Vanadium is found in fossil fuel deposits and 65 different minerals.
Vanadium is not found free in nature; however, once isolated it forms an oxide layer that stabilizes the free metal against further oxidation. Vanadium was named after the word "Vanadis" meaning goddess of beauty in Scandinavian mythology.
Related Information
Storage Conditions:
Airtight sealed, avoid light and keep dry at room temperature.Â
Please contact us for customization and price inquiry
Email: contact@nanochemazone.com
Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in various parameters
Nickel Silicide Powder
Nickel Silicide Powder
Product Name: Â Nickel Silicide Powder
| Product | Nickel Silicide Powder |
| CAS No | 12059-14-2 |
| Appearance | White Powder |
| Purity | 99.9% |
| APS | 1 – 5 Microns (Can be customized) |
| Ingredient | Ni2Si |
| Product Code | NCZ-NSC-133/20 |
Nickel Silicide Powder Related Information:
Nickel Silicide Powder: The reaction between SiC with chemically plated nickel on its surface has been investigated. X-ray analysis gave a good number of lattice parameters for Ni 3Si, a = 0.3522nm, and has good agreement with the index. The surface layer of Ni diffuses into the SiC and exothermically forms Ni 3Si in a defined temperature range, producing free carbon which could be deleterious to the properties.
A reaction is evident at temperatures 900°C and 1350°C with an increasing trend. The mechanism of sintering which is shown to be a reaction sintered transient-liquid phase method was determined by thermal analysis and metallographic techniques. The strength, hardness, and density properties of sintered Ni /Al (Liquid) + SiC composites are also reported.
Storage Conditions:
Airtight sealed, avoid light and keep dry at room temperature.
Please email us for the customization.
Email: contact@nanochemazone.com
Note: We supply different size ranges of nano and micron size powder as per the client’s requirements and also accept customization in various parameters.
Perlite Nanoclay Powder
Perlite Nanoclay Powder
Product Name: Perlite Nanoclay Powder (Purity: > 99.9%, APS: 80-100 nm)
Product |
Perlite Nanoclay Powder |
| Cat No | NCZ-MN-142/20 |
| CAS No | 1332-58-7 |
| Purity | 99.9% |
| APS | 80-100 nm |
| Color | Gray/ off white |
| Specific Gravity | 2.2-2.4 |
| Melting Point | >2000 °F |
| pH | Neutral |
| MOHS Hardness | 5.5 |
| Water Absorption | 200-600 % by weight |
| Oil Adsorption | 50-100 grms |
| Softening Point | 1800 F or 980 |
| G.E. Brightness % | 70-80% |
| Apparent Density | 2.5-10.5 lb/ft3 |
| Wet Density | 5-20 lb/ft3 |
| Refractive Index | 1.47 |
Perlite Nanoclay Related Information
Storage Conditions:
Airtight sealed, avoid light and keep dry at room temperature.
Please contact us for customization and price inquiry
Email: contact@nanochemazone.com
Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in various parameters.
Silicon oxide wafer P-Type (2 inch)
Product Name: Silicon oxide wafer P-Type (2 inches)
| Product Name | Silicon oxide wafer P-Type (2 inches) |
| Cat. No. | NCZ-NSC318/20
|
| Diameter | 50.8+- 0.2 mm (2 inch)
|
| Oxide Thickness | 300 +- 20 nm (dry)
|
| Resistivity | (1-10 Ohm/sq).
|
| Thickness | 300+ 15 µm
|
| Orientation | <100>+- 0.5
|
Silicon oxide wafer P-Type (2 inches) Description
Provided in Single wafer case
Single Crystal Silicon for solar energy applications includes p-type and n-type silicon. Silicon Silicon-based photovoltaic cells (PV Cells) for solar energy are fabricated from a positively charged or p-type silicon layer underneath a negatively charged or n-type silicon layer. These layers can be produced from single crystal silicon material sold under the AE Solar Energy group. Most silicon-based PV solar cells are produced from polycrystalline silicon with single-crystal systems the next most common. Silicon Metal is also available as a polycrystalline powder for casting, amorphous silicon for deposition, disc, granules, ingot, pellets, pieces, powder, rod, sputtering target, wire, and other forms and custom shapes. Ultra-high purity and high purity forms also include submicron powder and nanoscale powder. Single Crystal Silicon is generally immediately available in most volumes.
Silicon oxide wafer P-Type (2 inches) RELATED INFORMATION
Storage Conditions:
Airtight sealed, avoid light, and keep dry at room temperature.
Please email us for the customization.
Email: contact@nanochemazone.com
Note: We supply different size ranges of nano and micron size powder as per the client’s requirements and also accept customization in various parameters.
Single Crystal Silicon Dioxide Wafer P-Type
Single Crystal Silicon Dioxide Wafer P-Type
Product Name: Single Crystal Silicon Dioxide Wafer P-Type
| Product Name | Single Crystal Silicon Dioxide Wafer P-Type |
| Cat. No. | NCZ-NSC 319/20
|
| Diameter |
100 mm +-0.2 mm (4″)
|
| Oxide Thickness | 300 ±20 nm (dry)
|
| Color | Violet
|
| Thickness | 500 ± 20 micron |
|
Resistivity |
1-10 ohm-cm |
| Type/Dopant | P |
| Orientation | <100> |
Single Crystal Silicon Dioxide Wafer P-Type (4 inches) Description
Single Crystal Silicon Dioxide Wafer P-Type NanoChemazone produces Silicon Oxide Wafer with the highest possible density. Our standard wafer size is nominally 25.4 mm (1 inch) to 300 mm (11.8 inches). Materials are produced using crystallization, solid-state, and other ultra-high purification processes such as sublimation.
This process forms a cylindrical ingot which is then sliced and polished to form wafers. NanoChemazone High Purity (99.999%) Silicon Oxide Wafers- Polished & Unpolished specializes in producing custom compositions for commercial and research applications and new proprietary technologies.
NanoChemazone also casts any of the rare earth metals and most other advanced materials into rod, bar or plate form, as well as other machined shapes and through other processes such as nanoparticles and in the form of solutions and organometallics. We also produce Silicon as rod, pellets, powder, pieces, disc, ingot, wire, and in compound forms, such as oxide. Other shapes are available by request.
Single Crystal Silicon Dioxide Wafer P-Type (4 inches) RELATED INFORMATION
Storage Conditions:
Airtight sealed, avoid light, and keep dry at room temperature.
Please email us for the customization.
Email: contact@nanochemazone.com
Note: We supply different size ranges of nano and micron size powder as per the client’s requirements and also accept customization in various parameters.
Single Crystal Silicon Wafer Diameter Intrinsic (4-inch)
Single Crystal Silicon Wafer Diameter Intrinsic (4-inch)
Product Name: Single Crystal Silicon Wafer Diameter Intrinsic (4-inch)
| Product Name | Single Crystal Silicon Wafer |
| Cat No. | NCZ-NSC327/20 |
| Diameter | 4 inches |
| Doping | undoped |
| Thickness | 400~415+/-10um |
| Resistivity | 4000 5000 ohms.cm Undoped |
| Orientation | <100>+/-0.5 |
| Polishing | one side polished |
| Application | Research Material |
| Thickness | 525 Micron |
| Resistivity | 1-10 ohm-cm |
| Polished | Single side polished |
Provided in Single wafer case.
Description:
Single Crystal Silicon Wafer thickness Is determined by the mechanical strength of the material used the wafer must be thick enough to support its own weight without cracking during handling. Wafers are grown from crystal having a regular crystal structure, with silicon having a diamond cubic structure. Orientation is defined by the Miller index with (100) or (111) faces being the most common for silicon. Ion implantation depends on the wafer’s crystal orientation since each direction offers distinct paths the transport.
Note: SSP = Single Side Polished, DSP = Double Side Polished, E = Etched, C = AsCut, Material - CZ unless noted, L = Lapped, Und = Undoped (Intrinsic)
Single Crystal Silicon Wafer P Type 2 Inch
Single Crystal Silicon Wafer P Type 2 Inch
Product Name: Single Crystal Silicon Wafer P Type 2 Inch
| Product Name | Single Crystal Silicon Wafer P Type 2 Inch |
| Cat No. | NZC-NSC331/20 |
| Diameter | 2 inch
|
| Doping | P-type |
| Resistivity | (1-50 Ohm/sq.) |
| Thickness | 280 + 25 µm |
| Orientation | 100 |
| Polished | Single side polished |
Provided in a single wafer case
Single crystal silicon wafer P-Type (2 inches) Description:
NanoChemazone Supplies provides both standard and customized high-quality single crystals, wafers and substrates for a wide range of applications such as LED, ferroelectric, piezoelectric, electro-optical, photonics, high power electronics, and high-frequency power devices, just to name a few. Customized crystal growth, precision machining, and coating services are available. Please contact us today to discuss your project requirements.
Single crystal silicon wafer P-Type (2 inches) Related Information
Storage Conditions:
Airtight sealed, avoid light, and keep dry at room temperature.
Please contact us for customization and price inquiry
Email: contact@nanochemazone.com
Note: We supply different size ranges of Nano and micron as per the client’s requirements and Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request
Single Crystal Silicon Wafer P-Type (4 Inch)
Single Crystal silicon-silicon dioxide Wafer N-type (4 inch)
| Product Name | Single Crystal Silicon Wafer P-Type (4 Inch) |
| Cat No. | NZC-NSC333/20 |
| MF | Si/SiO2 |
| DÃa | 100mm ± 0.5mm (4 inch) |
| Type/Dopant | P
|
| Orientation | <100>
|
| Wafer thickness | 525±25um
|
| Resistivity | 1-10 ohm-cm
|
| Polished | Single side polished
|
| TTV | < 10um
|
| SiO2 Oxide Thickness | 300 nm (dry) |
Provided in single wafer box
Crystal silicon-silicon dioxide Wafer N-type (4 inches) Description
Single crystal silicon is the most widely used semiconductor material as a substrate material due to its excellent machinability, mechanical stability, and the potential to combine sensing elements and electronics on the same substrate. Circular wafers made of silicon are used as the substrate in most MEMS sensors. The crystal orientation should be known before manufacturing since silicon has orientation-dependent properties such as piezoresistivity coefficients and etching rates. The common orientation is (100) where the numbers represent Miller indices. As an example, (100) wafer that has a primary flat side as an indication of < 110 > direction. When a piezoresistive element is placed on a (100) wafer, the orientation should be parallel to < 110 > direction if the piezoresistivity coefficients in that direction are intended to be utilized.
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization: If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
Crystal Silicon dioxide Wafer N-type (4 inches) Â RELATED INFORMATION
Storage Conditions:
Airtight sealed, avoid light, and keep dry at room temperature.
Please contact us for customization and price inquiry
Email: contact@nanochemazone.com
Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in various parameters.
Reviews
There are no reviews yet.