Single Crystal Silicon-Silicon dioxide Wafer
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Single Crystal silicon-silicon dioxide Wafer
Product Name: Single Crystal silicon-silicon dioxide Wafer
| Product Name | Single Crystal silicon-silicon dioxide Wafer P-type (4 inches) |
| Cat No. | NCZ-NSC318/20 |
| Día | 100 mm (4 inches) |
| Orientation | <100> |
| Wafer thickness | 500 micrometer |
| Resistivity | <0.01 |
| Polished | Front Side Polished |
| Thickness | 300 nm (dry) |
| Purity | 99.9% |
| Formula | Si/SiO2 |
Single Crystal silicon-silicon dioxide Wafer P-type Description :
Provided in a single wafer case
Silicon oxide wafer SIO2 thin-film among semiconductor technology, SiO2 thin film layers are mainly used as dielectric material and more recently, they are integrated with MEMS (Micro Electro Mechanical Systems) devices. The simplest way to produce silicon oxide layers on silicon wafers is to oxidize silicon with oxygen.
Single Crystal silicon-silicon dioxide Wafer RELATED INFORMATION
Storage Conditions:
Airtight sealed, avoid light and keep dry at room temperature.
Please email us for the customization.
Email: contact@nanochemazone.com
Note: We supply different size ranges of nano and micron size powder as per the client’s requirements and also accept customization in various parameters.
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
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Single Crystal Silicon Dioxide Wafer P-Type
Single Crystal Silicon Dioxide Wafer P-Type
Product Name: Single Crystal Silicon Dioxide Wafer P-Type
| Product Name | Single Crystal Silicon Dioxide Wafer P-Type |
| Cat. No. | NCZ-NSC 319/20 |
| Diameter | 100 mm +-0.2 mm (4″) |
| Oxide Thickness | 300 ±20 nm (dry) |
| Color | Violet |
| Thickness | 500 ± 20 micron |
| Resistivity | 1-10 ohm-cm |
| Type/Dopant | P |
| Orientation | <100> |
Single Crystal Silicon Dioxide Wafer P-Type (4 inches) Description
Single Crystal Silicon Dioxide Wafer P-Type NanoChemazone produces Silicon Oxide Wafer with the highest possible density. Our standard wafer size is nominally 25.4 mm (1 inch) to 300 mm (11.8 inches). Materials are produced using crystallization, solid-state, and other ultra-high purification processes such as sublimation.
This process forms a cylindrical ingot which is then sliced and polished to form wafers. NanoChemazone High Purity (99.999%) Silicon Oxide Wafers- Polished & Unpolished specializes in producing custom compositions for commercial and research applications and new proprietary technologies.
NanoChemazone also casts any of the rare earth metals and most other advanced materials into rod, bar or plate form, as well as other machined shapes and through other processes such as nanoparticles and in the form of solutions and organometallics. We also produce Silicon as rod, pellets, powder, pieces, disc, ingot, wire, and in compound forms, such as oxide. Other shapes are available by request.
Single Crystal Silicon Dioxide Wafer P-Type (4 inches) RELATED INFORMATION
Storage Conditions: Airtight sealed, avoid light, and keep dry at room temperature. Please email us for the customization. Email: contact@nanochemazone.com Note: We supply different size ranges of nano and micron size powder as per the client’s requirements and also accept customization in various parameters.
Single Crystal Silicon Wafer Diameter Intrinsic (4-inch)
Single Crystal Silicon Wafer Diameter Intrinsic (4-inch)
Product Name: Single Crystal Silicon Wafer Diameter Intrinsic (4-inch)
| Product Name | Single Crystal Silicon Wafer |
| Cat No. | NCZ-NSC327/20 |
| Diameter | 4 inches |
| Doping | undoped |
| Thickness | 400~415+/-10um |
| Resistivity | 4000 5000 ohms.cm Undoped |
| Orientation | <100>+/-0.5 |
| Polishing | one side polished |
| Application | Research Material |
| Thickness | 525 Micron |
| Resistivity | 1-10 ohm-cm |
| Polished | Single side polished |
Single Crystal Silicon Wafer thickness Is determined by the mechanical strength of the material used the wafer must be thick enough to support its own weight without cracking during handling. Wafers are grown from crystal having a regular crystal structure, with silicon having a diamond cubic structure. Orientation is defined by the Miller index with (100) or (111) faces being the most common for silicon. Ion implantation depends on the wafer’s crystal orientation since each direction offers distinct paths the transport.
Note: SSP = Single Side Polished, DSP = Double Side Polished, E = Etched, C = AsCut, Material - CZ unless noted, L = Lapped, Und = Undoped (Intrinsic)
Single Crystal Silicon Wafer N-type (4-inch)
Single Crystal Silicon Wafer N-type (4-inch)
Product Name: Single Crystal Silicon Wafer N-type (4-inch)
| Product Name | Single Crystal Silicon Wafer N-type (4-inch) |
| Cat No. | NCZ-NSC331/20 |
| Día | 4 inches |
| Type | N |
| Diameter (mm) | 4” (100.8mm) |
| Type | N-Type |
| Doping | Phosphorous |
| Crystal Orientation | <100> |
| Surface: | Single Side Polished |
| Thickness | 250-500μm |
| Resistivity | 1-10ohm-cm |
| Crystal method | CZ |
| RRG (%) | ≤12 |
| Oxygen Contents (ppm) | 12.5-16.5 |
| Carbon Contents (ppm) | ≤1 |
Wafer resizing is sometimes referred to as wafer coring, re-sizing, cut down, cut-down, downsizing, down-sizing, size reducing or size reduction. We can accept orders ranging from a single wafer to hundreds of wafers per month. Our process is efficient, innovative, and ESD friendly. Our proprietary process causes less stress to the silicon wafer than other resizing methods. We also round wafer edges to eliminate edge chipping.
We frequently work with 2” (50 mm), 3” (75 mm), 100 mm (4”), 125 mm (5”), 150 mm (6”), 200 mm (8”), and 300 mm wafers; however, we are also capable of producing custom non-standard sizes.
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Single Crystal Silicon Wafer P-Type (4 Inch)
Single Crystal silicon-silicon dioxide Wafer N-type (4 inch)
| Product Name | Single Crystal Silicon Wafer P-Type (4 Inch) |
| Cat No. | NZC-NSC333/20 |
| MF | Si/SiO2 |
| Día | 100mm ± 0.5mm (4 inch) |
| Type/Dopant | P |
| Orientation | <100> |
| Wafer thickness | 525±25um |
| Resistivity | 1-10 ohm-cm |
| Polished | Single side polished |
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| SiO2 Oxide Thickness | 300 nm (dry) |
Crystal silicon-silicon dioxide Wafer N-type (4 inches) Description
Single crystal silicon is the most widely used semiconductor material as a substrate material due to its excellent machinability, mechanical stability, and the potential to combine sensing elements and electronics on the same substrate. Circular wafers made of silicon are used as the substrate in most MEMS sensors. The crystal orientation should be known before manufacturing since silicon has orientation-dependent properties such as piezoresistivity coefficients and etching rates. The common orientation is (100) where the numbers represent Miller indices. As an example, (100) wafer that has a primary flat side as an indication of < 110 > direction. When a piezoresistive element is placed on a (100) wafer, the orientation should be parallel to < 110 > direction if the piezoresistivity coefficients in that direction are intended to be utilized.
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com Customization: If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.Crystal Silicon dioxide Wafer N-type (4 inches) RELATED INFORMATION
Storage Conditions: Airtight sealed, avoid light, and keep dry at room temperature. Please contact us for customization and price inquiry Email: contact@nanochemazone.com Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in various parameters.
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