Single Crystal Silicon Wafer N-Type (1 inch)

Product Name: Single Crystal Silicon Wafer N-Type (1 inch)

Physical properties:

0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 100 – 3000 Ωcm.

Oxygen content: ≤ 1~1.8 x 1018 /cm3; Carbon content: ≤ 5 x 1016 /cm3; Boule diameter: 1~8 ″

Description:

Single Crystal Silicon Wafer N-Type (1 inch). We have heated polished doped single-crystal silicon wafers in a single-mode microwave cavity to temperatures where surface to surface bonding occurred. The absorption of microwaves and heating of the wafers is attributed to the inclusion of n-type or p-type impurities into these substrates.

A cylindrical cavity TM (sub 010) standing wave mode was used to irradiate samples of various geometry at positions of high magnetic field. This process was conducted in a vacuum to exclude plasma effects.

This initial study suggests that the inclusion of impurities in single crystal silicon significantly improved its microwave absorption (loss factor) to a point where heating silicon wafers directly can be accomplished in minimal time. Bonding of these substrates, however, occurs only at points of intimate surface to surface contact. The inclusion of a thin metallic layer on the surfaces enhances the bonding process.

Please email us for the customization.

Email: contact@nanochemazone.com

Please contact us for customization and price inquiry

Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in the various parameters