Single Crystal Silicon-Silicon dioxide Wafer
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Single Crystal silicon-silicon dioxide Wafer
Product Name: Single Crystal silicon-silicon dioxide Wafer
| Product Name | Single Crystal silicon-silicon dioxide Wafer P-type (4 inches) |
| Cat No. | NCZ-NSC318/20 |
| Día | 100 mm (4 inches) |
| Orientation | <100> |
| Wafer thickness | 500 micrometer |
| Resistivity | <0.01 |
| Polished | Front Side Polished |
| Thickness | 300 nm (dry) |
| Purity | 99.9% |
| Formula | Si/SiO2 |
Single Crystal silicon-silicon dioxide Wafer P-type Description :
Provided in a single wafer case
Silicon oxide wafer SIO2 thin-film among semiconductor technology, SiO2 thin film layers are mainly used as dielectric material and more recently, they are integrated with MEMS (Micro Electro Mechanical Systems) devices. The simplest way to produce silicon oxide layers on silicon wafers is to oxidize silicon with oxygen.
Single Crystal silicon-silicon dioxide Wafer RELATED INFORMATION
Storage Conditions:
Airtight sealed, avoid light and keep dry at room temperature.
Please email us for the customization.
Email: contact@nanochemazone.com
Note: We supply different size ranges of nano and micron size powder as per the client’s requirements and also accept customization in various parameters.
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
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Airtight sealed, avoid light and keep dry at room temperature.
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Single crystal silicon wafer Intrinsic (2-inch) is the most widely used semiconductor material as a substrate material due to its excellent machinability, mechanical stability, and the potential to combine sensing elements and electronics on the same substrate. Circular wafers made of silicon are used as a substrate in most MEMS sensors.
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Product Name: Single crystal silicon wafer N-type (2 inch)
| Product Name | Single crystal silicon wafer N-type (2 inch) |
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| Orientation | 100 |
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| dia | 2 inch |
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| Density | 2.33 g/mL at 25 °C (lit.) |
| Semiconductor properties | <100>, N-type |
| SMILES string | [Si] |
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Product Name: Single Crystal Silicon Wafer N-type (4-inch)
| Product Name | Single Crystal Silicon Wafer N-type (4-inch) |
| Cat No. | NCZ-NSC331/20 |
| Día | 4 inches |
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| Diameter (mm) | 4” (100.8mm) |
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| Surface: | Single Side Polished |
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We frequently work with 2” (50 mm), 3” (75 mm), 100 mm (4”), 125 mm (5”), 150 mm (6”), 200 mm (8”), and 300 mm wafers; however, we are also capable of producing custom non-standard sizes.
Please email us for the customization. Email: contact@nanochemazone.com Please contact us for customization and price inquiry Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in the various parameters.
Single Crystal Silicon Wafer P-Type (4 Inch)
Single Crystal silicon-silicon dioxide Wafer N-type (4 inch)
| Product Name | Single Crystal Silicon Wafer P-Type (4 Inch) |
| Cat No. | NZC-NSC333/20 |
| MF | Si/SiO2 |
| Día | 100mm ± 0.5mm (4 inch) |
| Type/Dopant | P |
| Orientation | <100> |
| Wafer thickness | 525±25um |
| Resistivity | 1-10 ohm-cm |
| Polished | Single side polished |
| TTV | < 10um |
| SiO2 Oxide Thickness | 300 nm (dry) |
Crystal silicon-silicon dioxide Wafer N-type (4 inches) Description
Single crystal silicon is the most widely used semiconductor material as a substrate material due to its excellent machinability, mechanical stability, and the potential to combine sensing elements and electronics on the same substrate. Circular wafers made of silicon are used as the substrate in most MEMS sensors. The crystal orientation should be known before manufacturing since silicon has orientation-dependent properties such as piezoresistivity coefficients and etching rates. The common orientation is (100) where the numbers represent Miller indices. As an example, (100) wafer that has a primary flat side as an indication of < 110 > direction. When a piezoresistive element is placed on a (100) wafer, the orientation should be parallel to < 110 > direction if the piezoresistivity coefficients in that direction are intended to be utilized.
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com Customization: If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
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